TIC116 Bourns, Inc., TIC116 Datasheet

no-image

TIC116

Manufacturer Part Number
TIC116
Description
Silicon Controlled Rectifiers
Manufacturer
Bourns, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIC116
Manufacturer:
TI
Quantity:
12 500
Part Number:
TIC116
Manufacturer:
ST
0
Part Number:
TIC116B
Manufacturer:
ST
0
Part Number:
TIC116D
Manufacturer:
TI
Quantity:
12 500
Part Number:
TIC116M
Manufacturer:
SAMHOP
Quantity:
12 000
Part Number:
TIC116M
Manufacturer:
ST
0
Part Number:
TIC116N
Manufacturer:
TI
Quantity:
12 500
Part Number:
TIC116N
Manufacturer:
ST
0
Part Number:
TIC116N-S
Manufacturer:
BOURNS
Quantity:
4 500
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Continuous on-state current at (or below) 70°C case temperature (see Note 1)
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3)
Peak positive gate current (pulse width ≤ 300 µs)
Peak gate power dissipation (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
R O D U C T
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
4. This value applies for a maximum averaging time of 20 ms.
linearly to zero at 110°C.
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
GT
of 20 mA
I N F O R M A T I O N
RATING
G
K
A
Pin 2 is in electrical contact with the mounting base.
TIC116M
TIC116M
SILICON CONTROLLED RECTIFIERS
TIC116D
TIC116S
TIC116N
TIC116D
TIC116S
TIC116N
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
P
T(RMS)
V
V
I
P
T(AV)
T
I
G(AV)
I
T
DRM
RRM
GM
T
TM
GM
stg
C
L
1
2
3
-40 to +110
-40 to +125
TIC116 SERIES
VALUE
400
600
700
800
400
600
700
800
230
80
8
5
3
5
1
MDC1ACA
UNIT
°C
°C
°C
W
W
V
V
A
A
A
A
1

Related parts for TIC116

TIC116 Summary of contents

Page 1

... Specifications are subject to change without notice. SILICON CONTROLLED RECTIFIERS Pin electrical contact with the mounting base. RATING TIC116D TIC116M TIC116S TIC116N TIC116D TIC116M TIC116S TIC116N TIC116 SERIES TO-220 PACKAGE (TOP VIEW MDC1ACA SYMBOL VALUE UNIT 400 600 V V DRM ...

Page 2

... TIC116 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Repetitive peak rated V DRM D off-state current Repetitive peak rated V RRM R reverse current I Gate trigger current ≥ 20 µ Gate trigger voltage GT ≥ ...

Page 3

... Angle 1 0·1 90 100 110 0·1 TRANSIENT THERMAL RESISTANCE CYCLES OF CURRENT DURATION TI03AC 10 1 0·1 100 1 Consecutive 50 Hz Half-Sine-Wave Cycles TIC116 SERIES SILICON CONTROLLED RECTIFIERS MAX ANODE POWER LOSS vs ON-STATE CURRENT Continuous On-State Current - A T Figure 2. vs TI03AD 10 Figure 4. TI03AB ...

Page 4

... TIC116 SERIES SILICON CONTROLLED RECTIFIERS GATE TRIGGER CURRENT vs CASE TEMPERATURE 10 1 -50 - Case Temperature - °C C Figure 5. HOLDING CURRENT vs CASE TEMPERATURE 100 Initiating -50 - Case Temperature - °C C Figure 7. 4 TYPICAL CHARACTERISTICS TC03AA 100 Ω ...

Related keywords