SI8435DB Vishay, SI8435DB Datasheet - Page 2

• Manufacturer Part Number: SI8435DB
• Description: P-channel 1.5-v G-s Mosfet
• Manufacturer: Vishay

Si8435DB
Vishay Siliconix
Notes:
a. Surface Mounted on 1“ x 1“ FR4 Board.
b. Maximum under Steady State conditions is 72 °C/W.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
a,b
= 25 °C, unless otherwise noted
ΔV
Symbol
ΔV
V
r
GS(th)
I
DS(on)
t
t
I
I
C
V
D(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
DS
g
Q
R
oss
t
t
DS
rss
iss
fs
gs
gd
r
f
g
g
/T
/T
J
J
Steady State
V
V
V
I
V
DS
D
DS
DS
DS
≅ - 1 A, V
= - 16 V, V
= - 20 V, V
New Product
V
= - 10 V, V
V
= - 10 V, V
V
V
V
V
V
V
V
V
V
DS
V
DS
GS
GS
DS
DD
GS
GS
GS
GS
DS
DS
Test Conditions
≤ - 5 V, V
= V
= 0 V, I
= - 20 V, V
= - 0.1 V, f = 1 MHz
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 1.5 V, I
= - 10 V, R
= 0 V, V
= - 10 V, I
I
D
GEN
GS
= - 250 µA
GS
GS
GS
GS
, I
Symbol
= - 4.5 V, R
D
R
R
= - 4.5 V, I
D
= 0 V , T
= - 5 V, I
GS
GS
= 0 V, f = 1 MHz
thJA
thJF
= - 250 µA
= - 250 µA
D
GS
D
D
D
D
L
= ± 5 V
= - 4.5 V
= - 1 A
= - 1 A
= - 1 A
= - 1 A
= - 1 A
= 10 Ω
= 0 V
J
D
D
g
= 70 °C
= - 1 A
= - 1 A
= 1 Ω
Typical
35
16
- 0.35
Min
- 20
- 15
Maximum
- 15.5
0.034
0.040
0.048
0.055
1600
10.5
3.25
1.95
Typ
265
175
230
2.5
45
20
23
22
20
15
29
91
S-72198-Rev. C, 22-Oct-07
Document Number: 73559
± 100
0.041
0.048
0.058
0.075
Max
- 1.0
- 10
345
137
- 1
16
35
33
23
44
°C/W
Unit
mV/°C
Unit
nA
µA
nC
pF
ns
Ω
Ω
V
V
A
S