SI8405DB Vishay, SI8405DB Datasheet
SI8405DB
Available stocks
Related parts for SI8405DB
SI8405DB Summary of contents
Page 1
... Bump Side View Backside View Device Marking: 8405 xxx = Date/Lot Traceability Code Ordering Information: Si8405DB-T1-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a ...
Page 2
... Si8405DB Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
Page 3
... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71814 S-82118-Rev. E, 08-Sep °C J 0.8 1.0 1.2 Si8405DB Vishay Siliconix 2000 1600 C iss 1200 800 C oss C 400 rss Drain-to-Source Voltage (V) DS Capacitance 1 4 ...
Page 4
... Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 Square Wave Pulse Duration (s) ...
Page 5
... Note 3 Solder Mask 0. Diamerter E a Millimeters Max. 0.650 0.290 0.360 0.410 1.600 1.600 0.850 0.380 Si8405DB Vishay Siliconix Silicon Bump Note Inches Min. Max. 0.0236 0.0256 0.0102 0.0114 0.0134 0.0142 0.0146 0.0161 0.0598 0.0630 0.0598 ...
Page 6
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...