IRF7530 International Rectifier Corp., IRF7530 Datasheet - Page 2
IRF7530
Manufacturer Part Number
IRF7530
Description
Hexfetpower Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
1.IRF7530.pdf
(8 pages)
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Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
R
I
S
SM
rr
d(on)
r
d(off)
f
DSS
fs
GSS
2
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
R
Min. Typ. Max. Units
0.60 –––
Starting T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1310 –––
–––
–––
–––
–––
–––
20
13
G
= 25Ω, I
0.01
–––
––– 0.030
––– 0.045
–––
–––
–––
–––
–––
180
150
–––
3.4
3.4
8.5
18
11
36
16
19
13
J
= 25°C, L = 2.6mH
AS
-100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
1.2
1.0
5.1
5.1
40
1.2
1.3
25
26
29
20
= 5.0A. (See Figure 10)
V/°C
nC
nC
pF
ns
V
S
V
Ω
V
MOSFET symbol
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
showing the
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 5.4A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 10Ω
= V
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.5V, I
= 10V, I
= 12V
= -12V
= 4.5V
= 10V
= 0V
GS
Conditions
, I
D
S
F
D
D
Conditions
GS
= 250uA
D
D
GS
= 1.3A, V
= 1.3A
= 250µA
= 5.4A
= 5.4A
= 4.6A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 70°C
= 0V
G
D
S