SI2316BDS Vishay, SI2316BDS Datasheet - Page 5

• Manufacturer Part Number: SI2316BDS
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 70445
S-71330-Rev. A, 02-Jul-07
5
4
3
2
1
0
0.01
0
0.1
2
1
http://www.vishay.com/ppg?70445
10 -
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
D
is based on T
T
C
Single Pulse
50
Current Derating*
- Case Temperature (°C)
10 -
3
75
J(max)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
10 -
125
2
New Product
Square Wave Pulse Duration (sec)
150
10 -
1
2.0
1.6
1.2
0.8
0.4
0.0
1
0
Power Derating, Junction-to-Foot
25
T
C
10
- Case Temperature (°C)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
50
P
DM
JM
T
t
A
1
75
= P
Vishay Siliconix
t
2
DM
Si2316BDS
Z
thJA
thJA
100
100
t
t
1
2
(t)
= 130 °C/W
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125
600
150
5