SI2316DS Vishay, SI2316DS Datasheet - Page 2

• Manufacturer Part Number: SI2316DS
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si2316DS
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test: PW v300 ms duty cycle v2%.
Guaranteed by design, not subject to production testing.
16
14
12
10
8
6
4
2
0
0
b
Parameter
2
V
a
a
DS
V
Output Characteristics
GS
a
– Drain-to-Source Voltage (V)
a
= 10 thru 5 V
4
A
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V(
V
r
I
DS(on)
BR)DSS
t
t
I
I
C
GS(th)
D(on)
V
C
Q
Q
C
d(on)
d(off)
GSS
DSS
Q
g
oss
t
SD
t
iss
rss
fs
gs
gd
r
f
g
8
4 V
3 V
2 V
10
New Product
I
V
D
V
V
DS
DS
DS
DS
DS
^ 1.0 A, V
V
V
= 15 V, V
V
= 24 V, V
= 15 V, V
V
DS
V
DS
V
V
V
V
V
V
Test Conditions
DS
I
DS
GS
GS
DS
S
DS
DD
GS
w 4.5 V, V
w 4.5 V, V
= 0.8 A, V
= 0 V, V
= V
= 0 V, I
= 24 V, V
= 4.5 V, I
= 4.5 V, I
= 15 V, R = 15 W
= 15 V, R
= 10 V, I
GEN
GS
GS
GS
GS
GS
GS
, I
= 10 V, I
GS
D
= 0 V, T
= 0 V, f = 1 MHz
= 10 V, R
D
GS
D
D
D
= 250 mA
GS
L
= 250 mA
GS
GS
= "20 V
= 3.4 A
= 3.4 A
= 2.6 A
= 15 W
= 0 V
= 0 V
= 4.5 V
= 10 V
J
D
D
16
14
12
10
= 55_C
G
= 3.4 A
8
6
4
2
0
= 6 W
0
1
V
GS
Transfer Characteristics
25_C
T
– Gate-to-Source Voltage (V)
Min
C
0.8
30
6
4
= 125_C
2
Limits
0.042
0.068
Typ
0.65
215
6.0
0.8
4.3
1.2
90
55
14
9
9
6
S-05481—Rev. A, 21-Jan-02
3
Document Number: 71798
–55_C
"100
Max
0.050
0.085
0.5
1.2
10
15
15
20
12
7
4
Unit
nC
nA
m
mA
pF
ns
W
W
V
A
S
V
5