TP0606 Supertex, Inc., TP0606 Datasheet

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TP0606

Manufacturer Part Number
TP0606
Description
P-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet

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Part Number:
TP0606N5
Manufacturer:
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Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
TP0606
Device
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (80pF typ.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Package Option
TP0606N3-G
TO-92
P-Channel Enhancement-Mode
Vertical DMOS FET
-55
O
BV
C to +150
DSS
-60
(V)
/BV
300
Value
BV
BV
±20V
DGS
DGS
DSS
O
O
C
C
R
(max)
Pin Confi gurations
Product Marking
3.5
DS(ON)
(Ω)
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Y Y W W
I
(min)
-1.5
D(ON)
(A)
0606
TP
YY = Year Sealed
WW = Week Sealed
V
(max)
-2.4
DRAIN
GS(th)
(V)
TO-92 (N3)
TO-92 (N3)
= “Green” Packaging
SOURCE
GATE
TP0606

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TP0606 Summary of contents

Page 1

... R BV /BV DS(ON) DSS DGS (max) (V) (Ω) -60 3.5 Pin Confi gurations Value BV DSS BV DGS ±20V +150 C O 300 C Product Marking I V D(ON) GS(th) (min) (max) (A) (V) -1.5 -2.4 SOURCE DRAIN GATE TO-92 (N3 Year Sealed 0606 WW = Week Sealed “Green” Packaging TO-92 (N3) TP0606 ...

Page 2

... 1.0MHz -25V -1.0A 25Ω GEN - GEN D.U.T. Output INPUT TP0606 I † DRM (A) -3.5 = -1.0mA = -1.0mA = Max Rating = 125°C = -25V DS = -25V DS = -250mA D = -750mA D = -750mA D = -750mA D = -1.0A = -1.0A ...

Page 3

... 150°C A -2.0 -2.4 -2.8 -3 25°C C -100 -1000 3 Saturation Characteristics - -10V -2 -8V -1 -6V - (volts) DS Power Dissipation vs. Case Temperature 2.0 TO-92 1 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 0.4 0.2 TO- 25° 0.001 0.01 0 (seconds) p TP0606 -10 150 10 ...

Page 4

... ISS - RSS -30 -40 4 On-Resistance vs. Drain Current -10V -0.8 -1.6 -2.4 -3.2 I (amperes and R Variation with Temperature (th DS(ON) -10V, -0.75A V @ -1mA (th) - 100 T (°C) j Gate Drive Dynamic Characteristics V = -10V DS 200 -40V 0.5 1.0 1.5 2.0 Q (nanocoulombs) G TP0606 -4.0 2.0 1.6 1.2 0.8 0.4 0 150 2.5 ...

Page 5

... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TP0606 A113007 Side View ...

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