SI4421DY Vishay, SI4421DY Datasheet

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SI4421DY

Manufacturer Part Number
SI4421DY
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4421DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4421DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4421DY-T1-E3
Quantity:
70 000
Part Number:
SI4421DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72114
S-70315-Rev. B, 12-Feb-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 20
(V)
Ordering Information:
G
S
S
S
0.00875 at V
0.01075 at V
0.0135 at V
1
2
3
4
r
DS(on)
Top View
GS
SO-8
GS
GS
J
a
(Ω)
Si4421DY-T1
Si4421DY-T1-E3 (Lead (Pb)-free)
= 150 °C)
= - 1.8 V
a
= - 4.5 V
= - 2.5 V
P-Channel 20-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
I
D
- 14
- 12
- 11
A
(A)
= 25 °C, unless otherwise noted
Steady State
Steady State
T
T
T
T
t ≤ 10 sec
A
A
A
A
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Game Station
G
Symbol
Symbol
T
R
R
J
- Load Switch
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
P-Channel MOSFET
DS
D
S
D
stg
D
S
®
Power MOSFET
10 secs
Typical
- 11.5
- 2.7
- 14
3.0
1.9
33
70
16
- 55 to 150
- 20
- 40
± 8
Steady State
Maximum
- 1.36
0.95
- 10
1.5
- 8
42
85
21
Vishay Siliconix
Si4421DY
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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SI4421DY Summary of contents

Page 1

... Top View Ordering Information: Si4421DY-T1 Si4421DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4421DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a r Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... 4000 2000 1.4 1.3 1.2 1.1 1.0 0.9 0 105 0.030 0.024 0.018 0.012 °C J 0.006 0.000 0.8 1.0 1.2 Si4421DY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 100 T - Junction Temperature (°C) J On-Resistance vs ...

Page 4

... Si4421DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product = 850 µA 75 100 125 150 100 DS(on 0 °C C Single Pulse 0.1 0 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72114. Document Number: 72114 S-70315-Rev. B, 12-Feb-07 New Product - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4421DY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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