SI4403BDY Vishay, SI4403BDY Datasheet - Page 3

• Manufacturer Part Number: SI4403BDY
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72268
S-70315-Rev. B, 12-Feb-07
0.08
0.06
0.04
0.02
0.00
30
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 9.9 A
0.2
On-Resistance vs. Drain Current
V
= 10 V
GS
6
V
7
SD
= 1.8 V
Q
g
T
- Source-to-Drain Voltage (V)
0.4
I
J
D
- Total Gate Charge (nC)
= 150 °C
Gate Charge
- Drain Current (A)
12
14
0.6
18
21
0.8
T
J
V
V
GS
GS
= 25 °C
= 2.5 V
= 4.5 V
24
28
1.0
1.2
30
35
4000
3500
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
V
I
D
D
- 25
C
GS
= 3.1 A
rss
= 9.9 A
= 4.5 V
1
4
T
0
J
V
V
C
- Junction Temperature (°C)
GS
DS
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
50
= 9.9 A
Vishay Siliconix
C
iss
Si4403BDY
12
75
3
100
www.vishay.com
16
4
125
150
20
5
3