SI4943CDY Vishay, SI4943CDY Datasheet - Page 3
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SI4943CDY
Manufacturer Part Number
SI4943CDY
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI4943CDY.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4943CDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4943CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4943CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69985
S-80638-Rev. A, 24-Mar-08
0.08
0.06
0.04
0.02
0.00
10
30
24
18
12
8
6
4
2
0
6
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 8.3 A
5
1
V
10
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
10
I
- Total Gate Charge (nC)
D
Gate Charge
V
- Drain Current (A)
V
V
GS
DS
2
GS
V
GS
= 2 V
= 10 V
= 10 thru 5 V
20
15
= 10 V
3
V
GS
20
= 4.5 V
V
V
V
DS
30
GS
GS
= 16 V
= 4 V
= 3 V
4
25
New Product
30
40
5
3000
2400
1800
1200
600
1.5
1.3
1.1
0.9
0.7
0
8
6
4
2
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
4
V
V
Transfer Characteristics
T
DS
GS
1
0
C
J
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
V
8
GS
T
C
T
= 10 V, I
C
C
= 25 °C
iss
50
2
= 125 °C
Vishay Siliconix
V
12
GS
D
Si4943CDY
75
= 8.3 A
= 4.5 V, I
100
3
www.vishay.com
T
16
C
D
= - 55 °C
= 6.4 A
125
150
20
4
3