SI4427BDY Vishay, SI4427BDY Datasheet - Page 3

• Manufacturer Part Number: SI4427BDY
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72295
S-70316-Rev. C, 12-Feb-07
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
V
DS
= 12.6 A
GS
0.2
On-Resistance vs. Drain Current
= 15 V
10
20
= 2.5 V
V
T
SD
J
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
20
40
0.6
30
60
0.8
V
V
GS
GS
T
= 4.5 V
= 10 V
J
40
80
= 25 °C
1.0
1.2
100
50
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 12.6 A
= 10 V
2
6
V
V
T
0
J
GS
DS
C
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
12
4
I
D
= 12.6 A
50
Vishay Siliconix
C
iss
Si4427BDY
18
6
75
www.vishay.com
100
24
8
125
150
10
30
3