SI4463BDY Vishay, SI4463BDY Datasheet

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SI4463BDY

Manufacturer Part Number
SI4463BDY
Description
P-channel 2.5-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SI4463BDY-T1-E3
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TI
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Part Number:
SI4463BDY-T1-E3
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VISHAY
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SI4463BDY-T1-E3
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SI4463BDY-T1-E3
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Part Number:
SI4463BDY-T1-GE3
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VISHAY/威世
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20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72789
S-71598-Rev. B, 30-Jul-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
Ordering Information: Si4463BDY-T1-E3 (Lead (Pb)-free)
- 20
DS
(V)
G
S
S
S
1
2
3
4
0.014 at V
0.020 at V
0.011 at V
r
Top View
DS(on)
SO-8
J
a
= 150 °C)
GS
GS
a
GS
(Ω)
= - 4.5 V
= - 2.5 V
= - 10 V
P-Channel 2.5-V (G-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
- 13.7
- 12.3
- 10.3
I
D
= 25 °C, unless otherwise noted
Steady State
Steady State
(A)
T
T
T
T
t ≤ 10 sec
A
A
A
A
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
G
GS
DS
D
S
D
stg
P-Channel MOSFET
S
D
Typical
10 sec
- 13.7
- 11.1
- 2.7
3.0
1.9
35
70
17
- 55 to 150
± 12
- 20
- 50
Steady State
Maximum
- 1.36
- 9.8
- 7.9
0.95
1.5
42
84
21
Vishay Siliconix
Si4463BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI4463BDY Summary of contents

Page 1

... Top View Ordering Information: Si4463BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4463BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a r Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 72789 S-71598-Rev. B, 30-Jul-07 New Product 5000 4000 3000 2000 1000 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si4463BDY Vishay Siliconix C iss C oss C rss – Drain-to-Source Voltage (V) DS Capacitance 1 13 1.3 1.2 1.1 1.0 0.9 0 ...

Page 4

... Si4463BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 75 100 125 150 100 r Limited DS(on D(on) Limited °C C 0.1 Single Pulse BV Limited DSS 0 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72789. Document Number: 72789 S-71598-Rev. B, 30-Jul-07 New Product Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4463BDY Vishay Siliconix 1 1 www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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