1MBI400U-120 Fuji Electric holdings CO.,Ltd, 1MBI400U-120 Datasheet

1MBI400U-120

Manufacturer Part Number

1MBI400U-120

Description

Igbt Module 1200v / 400a 1 In One-package Igbt Module U-series

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.1MBI400U-120.pdf (4 pages)

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1MBI400U-120

IGBT Module U-Series

· High speed switching

· Voltage drive

· Low inductance module structure

Item

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage between terminal and copper base *1

Screw Torque

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*

Thermal resistance

Contact Thermal resistance

Items

1 :

2 :

:Biggest internal terminal resistance among arm.

Thermal resistance characteristics

: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Electrical characteristics (at Tj=25°C unless otherwise specified)

Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M6), Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7 N·m(M4)

All terminals should be connected together when isolation test will be done.

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Features

Maximum ratings and characteristics

Symbols

(terminal)

(chip)

(terminal)

(chip)

R lead

Rth(j-c)

Rth(c-f)*

CES

GES

off

r(i)

GE(th)

CE(sat)

ies

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Mounting *

Terminals *

Applications

Conditions

IGBT

FWD

With thermal compound

=400A

Conditions

=1.5

=20V, I

=10V, V

=0V, V

=15V, I

=±15V

=0V

=600V

Symbol

-I

stg

CES

GES

iso

pulse

=400mA

=400A

=1200V

=±20V

=0V, f=1MHz

1200V / 400A 1 in one-package

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Conditions

Continuous

AC:1min.

1 device

1ms

Characteristics

Min.

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

–

4.5

–

Typ.

Equivalent Circuit Schematic

–

0.0125

–

6.5

1.95

2.20

1.75

2.00

0.36

0.21

0.03

0.37

0.07

1.80

1.90

1.60

1.70

–

0.40

Rating

-40 to +125

1200

2155

+150

2500

±20

600

400

800

400

800

3.5

4.5

1.7

Max.

800

0.058

0.100

–

4.0

8.5

2.30

–

2.10

–

1.20

0.60

–

1.00

0.30

2.10

–

1.90

–

0.35

–

Unit

°C

VAC

N·m

µs

°C/W

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1MBI400U-120 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1000 VGE=20V 15V 800 600 400 200 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1000 Tj=25°C 800 600 400 200 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25° ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.5 , Tj= 25°C 10000 1000 100 10 0 200 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=±15V, Tj= 25°C 10000 1000 tr 100 10 0.1 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 1000 Tj=25°C 800 600 400 200 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm M127 chip 1000 Tj=125°C 100 FWD IGBT ...

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