FT07N Power Semiconductors, Inc., FT07N Datasheet

FT07N

Manufacturer Part Number

FT07N

Description

Phase Control Thyristor

Manufacturer

Power Semiconductors, Inc.

Datasheet

1.FT07N.pdf (2 pages)

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P WER Semiconductors Inc.

Aux., Cathode terminal

Positioning pin hole

3.5mm (0.140") DIA

1.8mm (0.070") Deep

one on each side

of gate pin terminal

1.47mm (0.060) DIA.

Specifying voltage:

1600V, FT07N16

6.2mm (0.245") L

4.9mm (0.195") W

0.8mm (0.030") H

Transparent view

Gate Leads

20 AWG twisted pair

Lenth 270 ~ 280mm (10.5 ~ 11")

Gate White | Cathode Red

Weight 200g ( 7 oz)

Maximum Repetitive Off-State Voltage

Maximum Repetitive Reverse Voltage

Maximum non repetitive Surge of Reverse Voltage

Critical rate of rising off-state Voltage,

Note 1: T

Note 5: V

Gate Trigger Voltage

Maximum Gate Trigger Current

Minimum Forward Current to Latch on-state

Maximum permissible Gate Voltage not to Trigger

Maximum permissible Gate Current not to Trigger

Maximum peak non repetitive Gate Voltage

Maximum Negative Gate Voltage

Maximum non repetitive Gate Current

Maximum Repetitive Gate Current

Average Gate Power

www.PowerSemiconductors.com

Voltage

Gate

Note 1: T

RIGGERING

100

DRM

ONE

and V

RRM

200

Note 2: T

have I

+ 5

1800V, FT07N18

2000V, FT07N20

DRM

Note 3

(recommended)

Note 2: T

Gate Charateristics

300

34 mm (1.34")

, I

Parameter

125

RRM

FT package

47 mm (1.85") DIA. MAX.

of up to 35mA.

Instantaneous Gate Curent (mA)

125

31 mm (1.22")

DIA both sides

400

Notes 1,3

Note 3: Rectangular pulse, t

Notes 2, 4

Note 2, 3

Notes 2, 3

These graphs depict a typical device, each device has unique characteristics

Linear to 80% of V

Notes 2, 3

e-mail: Information@PowerSemiconductors.com

Notes: 1, 3, 4, 5, 6

Notes: 1, 3, 4, 5, 6, 7

500

2200V, FT07N22

Above 2200V inquire for availability.

Note 3: Measured at the peak of the sine wave,

Note 6: V

Notes 2, 3

Notes 1, 5

26.5 mm (1.044") MAX

600

52mm (2.05")

DIA. MAX

Notes 1, 3

Notes 1,3

Notes: 2, 3, 4, 5, 6

ECOMMENDED

DRM

and V

[ 8.3 ms.

Note: 2

0.9 ~ 3 W

NODE

ATE

700

tp = 8ms

RIGGER

OWER TO THE

have typical I

ATHODE

ATTS

Note 4: Rectangular -V

ULSE

OWER

800

ATE

XCESS

Symbol

, I

dv/dt

OWER TO THE

900

-V

of 2~7mA.

G(AVE)

GDM

GRM

Part number scheme

F T 07 N 18 KNX

1) Package designation

2) Thyristor designation (i.e. SCR)

3) Series number

4) Designates standard recovery time

5) Voltage Multiplier (example: 18 x 100 = 1800)

6) Proprietary suffix

DRM

RRM

RSM

GDM

Features:

All diffused silicone.

Center amplifying gate.

Standard recovery time for phase control applications.

Disk press package (nick named, Hockey Puck)

Metal and ceramic package construction.

Double side cooling.

ATE

1000

pulse, t

-20C

25C

125C

Phase Control

125

-20

Note 4: Below 0

Note 7: For DC applications derate V

Temp.

Thyristor

[ 8.3 ms.

1600 ~ 2200

Maximum non repetitive

100

Tel. 760-931-9177

Rating

RRM

0.9 ~ 3

2.7 ~ 3.5

2.6 ~ 3.3

2.5 ~ 3.1

200

300

800

250

8.4

3.7

1) tp = 4 ~ 8 ms

2) tp = 2 ms

3) tp = 1 ms

4) tp = 0.1 ~ 0.5 ms 100 Watts

Typ.

+ 100

Note 5: Test conditions: I

Instantaneous Gate Current ( A )

ECTANGULAR

ATE

C derate V

Max.

3.5

Part # FT07N . . series

OWER

ULSE

T(AVE)

DRM

, T

15 Watts

30 Watts

60 Watts

and V

125 C

700A

RRM

Amperes

Units

RRM

DRM

Watts

Volts

Page 1 of 2

V/ s

1600V ~ 2200V

10%.

45%.

= 12 .

)

100

Related parts for FT07N

FT07N Summary of contents

Page 1

... C P NODE ATHODE OWER ATE RIGGER ULSE tp = 8ms 500 600 700 800 900 1000 e-mail: Information@PowerSemiconductors.com Part # FT07N . . series Phase Control I 700A T(AVE) Thyristor V V 1600V ~ 2200V DRM RRM Rating Units 1600 ~ 2200 Volts 1600 ~ 2200 Volts ...

Page 2

... A ) Symbol T J Notes: th-J-C Notes th-C-hs Mounting Pressure Note 2: Mounting surfaces flat and greased Note 5: 180 O on-state e-mail: Information@PowerSemiconductors.com FT07N . . series Rating Units 700 Amperes 1000 Amperes 400 A/ s 400 265 ...

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