SI1413EDH Vishay, SI1413EDH Datasheet

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SI1413EDH

Manufacturer Part Number
SI1413EDH
Description
P-channel 20-v D-s Mosfet With Copper Leadframe
Manufacturer
Vishay
Datasheet

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Part Number:
SI1413EDH
Manufacturer:
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Part Number:
SI1413EDH-T1-E3
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Notes
a.
Document Number: 71396
S-03186—Rev. A, 05-Mar-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–20
(V)
G
D
D
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
0.155 @ V
0.220 @ V
0.115 @ V
J
a
= 150_C)
a
r
Parameter
Parameter
DS(on)
_
GS
GS
GS
a
a
6
5
4
= –2.5 V
= –1.8 V
= –4.5 V
(W)
P-Channel 20-V (D-S) MOSFET
a
D
D
S
Marking Code
BA
Steady State
Steady State
T
T
T
T
t v 5 sec
I
New Product
A
A
A
A
D
–2.9
–2.4
–2.0
XX
Part # Code
= 25_C
= 85_C
= 25_C
= 85_C
(A)
_
Lot Traceability
and Date Code
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJA
thJF
I
I
GS
DS
D
S
D
stg
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 3000 V
D Thermally Enhanced SC-70 Package
D Load Switching
D PA Switch
D Level Switch
G
Typical
5 secs
–2.9
–2.0
–1.4
1.56
0.81
100
60
34
–55 to 150
"12
–20
3 kW
–8
Steady State
Maximum
Vishay Siliconix
–2.3
–1.6
–0.9
0.52
125
1.0
80
45
Si1413EDH
D
S
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1

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SI1413EDH Summary of contents

Page 1

... 25_C 85_C stg Symbol Typical sec R thJA Steady State Steady State R thJF Si1413EDH Vishay Siliconix Steady State Unit –20 V "12 –2.3 –2.9 –2.0 –1.6 A –8 –1.4 –0.9 1.56 1.0 W 0.81 0.52 _C –55 to 150 Maximum ...

Page 2

... Si1413EDH Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 71396 S-03186—Rev. A, 05-Mar-01 New Product 6.0 7.5 6.0 7.5 Si1413EDH Vishay Siliconix Transfer Characteristics –55_C C 6 25_C 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance 1000 800 C iss 600 ...

Page 4

... Si1413EDH Vishay Siliconix Source-Drain Diode Forward Voltage 150_C J 1 0.1 0 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 = 250 0.3 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – ...

Page 5

... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 71396 S-03186—Rev. A, 05-Mar-01 New Product _ Normalized Thermal Transient Impedance, Junction-to-Foot –2 10 Square Wave Pulse Duration (sec) Si1413EDH Vishay Siliconix – www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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