SI1065X Vishay, SI1065X Datasheet

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SI1065X

Manufacturer Part Number
SI1065X
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. Maximum under Steady State conditions is 650 °C/W.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 74320
S-80641-Rev. B, 24-Mar-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
- 12
(V)
Ordering Information: Si1065X-T1-E3 (Lead (Pb)-free)
G
D
D
0.130 at V
0.158 at V
0.205 at V
1
2
3
SC-89 (6-LEADS)
R
DS(on)
Top View
GS
GS
GS
(Ω)
= - 4.5 V
= - 2.5V
= - 1.8V
J
a
= 150 °C)
a, b
Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
5
4
P-Channel 12-V (D-S) MOSFET
D
D
S
I
D
1.18
1.07
0.49
(A)
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Marking Code
T
T
T
T
T
6.7
(Typ.)
A
A
A
A
A
W
t ≤ 5 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
XX
Part # Code
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• 100 % R
• Load Switch for Portable Devices
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
thJA
I
I
DS
GS
D
S
D
stg
g
Tested
®
Typical
Power MOSFET
440
540
- 55 to 150
- 1.18
- 0.94
0.236
0.151
G
- 0.2
Limit
- 12
± 8
- 8
P-Channel MOSFET
b, c
b, c
b, c
b, c
b, c
Maximum
530
650
S
D
Vishay Siliconix
Si1065X
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI1065X Summary of contents

Page 1

... Top View Ordering Information: Si1065X-T1-E3 (Lead (Pb)-free) Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current a Maximum Power Dissipation ...

Page 2

... Si1065X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-80641-Rev. B, 24-Mar-08 New Product = 25 °C, unless otherwise noted 1 1 2.4 3.0 1000 800 600 400 200 9 Si1065X Vishay Siliconix 2.0 1 ° 125 ° °C C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temp. C iss C oss ...

Page 4

... Si1065X Vishay Siliconix TYPICAL CHARACTERISTICS 150 °C J 0.1 0.01 0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.9 0.8 0.7 0.6 0.5 0.4 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product = 25 °C, unless otherwise noted A 0.24 0.18 0. °C J 0.06 0.00 0 250 µ 13 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74320 Document Number: 74320 S-80641-Rev. B, 24-Mar-08 New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration (s) Si1065X Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 540 ° ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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