SI3483DV Vishay, SI3483DV Datasheet - Page 3

• Manufacturer Part Number: SI3483DV
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72078
S-40238—Rev. B, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
0.2
= 6.2 A
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
5
5
V
SD
Q
0.4
g
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
T
− Drain Current (A)
Gate Charge
J
10
10
= 150_C
0.6
0.8
15
15
V
1.0
GS
T
J
= 25_C
= 10 V
20
20
1.2
1.4
25
25
1600
1400
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
−25
D
rss
GS
I
= 6.2 A
D
= 10 V
= 2 A
2
6
T
V
V
0
J
GS
DS
C
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
12
4
Vishay Siliconix
I
C
50
D
iss
= 6.2 A
18
6
75
Si3483DV
100
24
www.vishay.com
8
125
150
10
30
3