SI3433BDV Vishay, SI3433BDV Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI3433BDV
Manufacturer Part Number
SI3433BDV
Description
P-channel 1.8-v G-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI3433BDV.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3433BDV
Manufacturer:
VISHAY
Quantity:
30 000
Company:
Part Number:
SI3433BDV-T1
Manufacturer:
TI
Quantity:
1 800
Part Number:
SI3433BDV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3433BDV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 72027
S-40575—Rev. C, 29-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.6 A
0.2
On-Resistance vs. Drain Current
V
= 10 V
GS
4
V
SD
Q
= 1.8 V
3
g
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
− Drain Current (A)
Gate Charge
8
T
0.6
6
J
= 150_C
12
0.8
V
V
T
GS
GS
9
J
= 25_C
16
= 2.5 V
= 4.5 V
1.0
1.2
20
12
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
−25
D
GS
= 5.6 A
= 4.5 V
1
4
T
V
V
0
J
C
GS
DS
C
− Junction Temperature (_C)
oss
iss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
Vishay Siliconix
50
= 5.6 A
Si3433BDV
12
3
75
100
16
www.vishay.com
4
125
150
20
5
3