SI3443CDV Vishay, SI3443CDV Datasheet

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SI3443CDV

Manufacturer Part Number
SI3443CDV
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Document Number: 74495
S-72338-Rev. A, 05-Nov-07
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 20
(V)
Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free)
C
= 25 °C.
0.060 at V
0.084 at V
0.100 at V
3 mm
r
DS(on)
GS
GS
GS
(Ω)
J
= - 4.5 V
= - 2.7 V
= - 2.5 V
= 150 °C)
b, d
Top View
1
2
3
TSOP-6
2.85 mm
P-Channel 20-V (D-S) MOSFET
I
6
5
4
D
- 4.7
- 3.9
- 3.4
(A)
Steady State
a
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
7.53 nC
g
(Typ)
New Product
Marking Code
Symbol
AL
R
R
thJA
thJF
Symbol
T
XXX
J
V
V
Part # Code
I
P
, T
DM
I
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• PWM Optimized
• 100 % R
• HDD
• Asynchronous Rectification
• Load Switch for Portable Devices
Lot Traceability
and Date Code
Typical
51
32
g
Tested
®
Power MOSFET
- 55 to 150
- 1.71
- 4.7
- 3.4
1.28
- 5.97
- 2.67
2.0
Limit
± 12
- 4.6
(3) G
2.05
- 20
- 20
3.2
b, c
b, c
b, c
b, c
b, c
P-Channel MOSFET
Maximum
(1, 2, 5, 6) D
62.5
39
Vishay Siliconix
(4) S
Si3443CDV
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
°C
W
V
A
1

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SI3443CDV Summary of contents

Page 1

... GS 0.100 2 TSOP-6 Top View 2.85 mm Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si3443CDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 74495 S-72338-Rev. A, 05-Nov-07 New Product 1200 = 4 Si3443CDV Vishay Siliconix 4.0 3.2 2.4 1 125 ° ° ° 0.0 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 900 C iss 600 ...

Page 4

... Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.5 1.3 1.1 0.9 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.15 0.12 0. °C J 0.06 0.03 0.00 0.6 0.8 1 250 µ 100 125 ...

Page 5

... Document Number: 74495 S-72338-Rev. A, 05-Nov-07 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si3443CDV Vishay Siliconix 100 125 T - Case Temperature (°C) C Power, Junction-to-Foot www.vishay.com 150 ...

Page 6

... Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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