SI3473CDV Vishay, SI3473CDV Datasheet - Page 4

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SI3473CDV

Manufacturer Part Number
SI3473CDV
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Si3473CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
- 50
0.0
I
D
- 25
= 250 µA
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
T
J
= 150 °C
75
0.01
0.8
100
0.1
10
1
0.1
100
Limited by R
T
* V
Single Pulse
J
1.0
T
= 25 °C
GS
A
125
= 25 °C
> minimum V
V
New Product
DS
150
1.2
Safe Operating Area
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS
at which R
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1 ms
10 ms
1 s, 10 s
DC
100 ms
30
25
20
15
10
5
0
0.01
is specified
0
I
D
On-Resistance vs. Gate-to-Source Voltage
= 8.1 A
0.1
100
1
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
2
1
Time (s)
S-80796-Rev. B, 14-Apr-08
Document Number: 69947
3
10
T
T
A
A
= 25 °C
4
= 125 °C
100
600
5

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