SI5435BDC Vishay, SI5435BDC Datasheet - Page 3

• Manufacturer Part Number: SI5435BDC
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73137
S-41887—Rev. A, 18-Oct-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
V
I
GS
D
DS
Source-Drain Diode Forward Voltage
0.2
= 4.3 A
= 4.5 V
On-Resistance vs. Drain Current
5
= 15 V
3
V
SD
Q
0.4
g
− Source-to-Drain Voltage (V)
I
T
− Total Gate Charge (nC)
10
D
6
J
= 150_C
− Drain Current (A)
Gate Charge
0.6
15
9
0.8
20
12
T
1.0
V
J
GS
= 25_C
= 10 V
25
15
1.2
1.4
30
18
New Product
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
−25
D
rss
GS
= 4.3 A
5
= 4.5 V
C
2
oss
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
10
− Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
50
15
I
D
= 4.3 A
C
Si5435BDC
iss
6
75
20
100
www.vishay.com
8
25
125
150
10
30
3