SI5499DC Vishay, SI5499DC Datasheet - Page 5

• Manufacturer Part Number: SI5499DC
• Description: P-channel 1.5v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
0.7
0.6
0.5
0.4
0.3
0.2
40
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
0
SD
0.4
Threshold Voltage
T
- Source-to-Drain Voltage (V)
J
- Temperature (°C)
25
T
J
0.6
= 150 °C
50
0.8
I
D
75
= 250 µA
0.01
100
0.1
1.0
10
T
100
0.01
1
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
* V
Limited by r
1.2
125
GS
New Product
> minimum V
V
1.4
150
DS
DS(on)
- Drain-to-Source Voltage (V)
0.1
Single Pulse
T
A
*
= 25 °C
GS
at which r
DS(on)
1
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
T
A
= 25 °C
1
V
1 ms
10 ms
100 ms
1 s
10 s
DC
10
GS
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
Vishay Siliconix
T
A
3
= 125 °C
Si5499DC
10
www.vishay.com
I
D
100
4
= 5.1 A
1000
5
5