SI5515DC Vishay, SI5515DC Datasheet - Page 6

• Manufacturer Part Number: SI5515DC
• Description: Complementary 20-v D-s Mosfet
• Manufacturer: Vishay

www.vishay.com
6
Si5515DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
1
0.2
= 3 A
On-Resistance vs. Drain Current
= 10 V
3
V
SD
2
Q
0.4
g
V
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
GS
V
T
GS
J
− Drain Current (A)
3
Gate Charge
= 150_C
= 1.8 V
6
= 2.5 V
0.6
4
0.8
9
5
1.0
V
T
GS
6
J
= 25_C
12
= 4.5 V
1.2
7
1.4
15
8
800
600
400
200
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
C
On-Resistance vs. Junction Temperature
D
V
I
rss
−25
D
= 0.6 A
GS
= 3 A
= 4.5 V
1
4
T
V
V
0
J
DS
GS
− Junction Temperature (_C)
C
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
C
iss
I
50
D
= 3 A
S-41167—Rev. B, 14-Jun-04
12
3
Document Number: 72221
75
P-CHANNEL
100
16
4
125
150
20
5