SI5509DC Vishay, SI5509DC Datasheet - Page 8

• Manufacturer Part Number: SI5509DC
• Description: N- And P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

www.vishay.com
8
0.20
0.15
0.10
0.05
0.00
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
5
4
3
2
1
0
0.0
0
0
I
V
D
GS
= 3.9 A
0.6
V
2
1
= 2.5 V
DS
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
D
V
– Total Gate Charge (nC)
GS
– Drain Current (A)
1.2
Gate Charge
4
2
= 10 V
V
V
GS
GS
1.8
= 5 V thru 3 V
6
3
= 4.5 V
V
V
V
V
GS
GS
GS
GS
2.4
= 2.5 V
= 2 V
8
4
= 1.5 V
= 16 V
_
3.0
10
5
New Product
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
C
–25
rss
V
V
GS
GS
0.5
V
V
4
DS
GS
= 4.5 V, I
= 2.5 V, I
T
Transfer Characteristics
J
T
0
– Junction Temperature (_C)
C
– Drain-to-Source Voltage (V)
T
– Gate-to-Source Voltage (V)
= 25 _C
C
= 125 _C
25
Capacitance
D
D
1.0
8
= 3.9 A
= 2.9 A
Vishay Siliconix
C
50
C
oss
iss
S–60417—Rev. A, 20-Mar-06
Document Number: 73629
1.5
12
75
Si5509DC
T
100
C
= –55 _C
2.0
16
125
150
2.5
20