SI6435ADQ Vishay, SI6435ADQ Datasheet

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SI6435ADQ

Manufacturer Part Number
SI6435ADQ
Description
30-v D-s Single
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6435ADQ-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI6435ADQ-T1(435A)
Manufacturer:
PHI
Quantity:
5
Part Number:
SI6435ADQ-T1-E3
Manufacturer:
VISHAY
Quantity:
100
Part Number:
SI6435ADQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI6435ADQ-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71104
S-80682-Rev. B, 31-Mar-08
Ordering Information: Si6435ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
D
G
S
S
1
2
3
4
0.055 at V
0.030 at V
Si6435ADQ
TSSOP-8
R
Top View
DS(on)
J
a
= 150 °C)
a
GS
GS
= - 4.5 V
(Ω)
= - 10 V
P-Channel 30-V (D-S) MOSFET
a
8
7
6
5
D
S
S
D
a
A
I
= 25 °C, unless otherwise noted
± 5.5
± 4.1
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free
Symbol
Symbol
G
T
R
R
TrenchFET
J
V
V
I
P
, T
DM
P-Channel MOSFET
I
I
thJA
thJF
GS
DS
D
S
D
stg
S*
D
®
Power MOSFETs
Typical
- 1.35
± 5.5
± 4.5
10 s
100
1.5
1.0
65
43
* Source Pins 2, 3, 6 and 7
must be tied common.
- 55 to 150
± 20
± 30
- 30
Steady State
Maximum
- 0.95
± 4.7
± 3.7
1.05
0.67
120
83
52
Vishay Siliconix
Si6435ADQ
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6435ADQ Summary of contents

Page 1

... GS TSSOP Si6435ADQ Top View Ordering Information: Si6435ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si6435ADQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71104 S-80682-Rev. B, 31-Mar- °C J 0.8 1.0 1.2 Si6435ADQ Vishay Siliconix 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si6435ADQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 I 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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