SI6544BDQ Vishay, SI6544BDQ Datasheet

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SI6544BDQ

Manufacturer Part Number
SI6544BDQ
Description
N- And P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6544BDQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI6544BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
3 182
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Part Number:
SI6544BDQ-T1-E3
Quantity:
70 000
Notes
a.
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
N-Channel
P Channel
P-Channel
Surface Mounted on FR4 Board, t v 10 sec.
i
G
D
S
S
1
1
1
1
J
Ordering Information: Si6544BDQ-T1
1
2
3
4
ti
V
DS
D
- 30
t A bi
30
30
30
(V)
TSSOP-8
Parameter
Parameter
Top View
J
J
a
a
= 150_C)
= 150_C)
t
a
a
N- and P-Channel 30-V (D-S) MOSFET
a
a
0.073 @ V
0.043 @ V
0.046 @ V
0.032 @ V
8
7
6
5
r
D
S
S
G
a
DS(on)
Steady State
2
2
2
2
t v 10 sec
T
T
T
T
A
A
A
A
GS
= 25_C
= 70_C
= 25_C
= 70_C
GS
GS
GS
(W)
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Symbol
T
New Product
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
DS
GS
D
D
S
D
D
stg
G
1
I
D
N-Channel MOSFET
- 3.8
- 2.8
10 sec
4.3
3.7
(A)
1.14
0.73
1..0
4.3
3.5
N-Channel
D
S
Typical
1
1
120
30
20
88
65
Steady State
FEATURES
D TrenchFETr Power MOSFETS
0.83
0.53
3.7
3.0
0.7
- 55 to 150
"20
10 sec
G
2
- 1..0
1.14
0.73
- 3.8
- 3.0
P-Channel MOSFET
Vishay Siliconix
P-Channel
Maximum
110
150
- 30
- 20
80
Si6544BDQ
Steady State
S
D
2
2
0.83
0.53
- 3.8
- 2.6
- 0.7
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI6544BDQ Summary of contents

Page 1

... Top View Ordering Information: Si6544BDQ-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si6544BDQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain Source On State Resistance ...

Page 3

... Total Gate Charge (nC) g Document Number: 72244 S-31251—Rev. A, 16-Jun-03 New Product Si6544BDQ Vishay Siliconix N−CHANNEL Transfer Characteristics 125_C C 4 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Capacitance 1100 ...

Page 4

... Si6544BDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 25_C J 1 0.1 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J 100 0.1 0.01 www.vishay.com 4 New Product 0.15 0.12 0.09 0.06 0.03 0.00 1.2 1.5 200 160 120 100 125 ...

Page 5

... Document Number: 72244 S-31251—Rev. A, 16-Jun-03 New Product - Square Wave Pulse Duration (sec Square Wave Pulse Duration (sec) Si6544BDQ Vishay Siliconix N−CHANNEL Notes Duty Cycle Per Unit Base = R = 120_C/W thJA (t) 3 ...

Page 6

... Si6544BDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.15 0. 0.06 0.03 0. Drain Current (A) D Gate Charge 3 0.0 3.2 6.4 9 Total Gate Charge (nC) g www ...

Page 7

... Safe Operating Area, Junction-to-Case Limited by r DS(on 25_C C Single Pulse 0 Drain-to-Source Voltage (V) DS Si6544BDQ Vishay Siliconix P−CHANNEL On-Resistance vs. Gate-to-Source Voltage Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient - ...

Page 8

... Si6544BDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 8 New Product - Square Wave Pulse Duration (sec) ...

Page 9

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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