VN0300 Supertex, Inc., VN0300 Datasheet
VN0300
Manufacturer Part Number
VN0300
Description
N-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
1.VN0300.pdf
(2 pages)
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Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Ordering Information
memories, displays, bipolar transistors, etc.)
BV
BV
ISS
30V
DSS
DGS
and fast switching speeds
/
R
(max)
1.2Ω
DS(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
BV
300°C
BV
± 30V
(min)
I
1.0A
DGS
D(ON)
DSS
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Note: See Package Outline section for dimensions.
Order Number / Package
VN0300L
TO-92
TO-92
S G D
VN0300
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VN0300 Summary of contents
Page 1
... Package Option BV DSS BV DGS ± 30V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VN0300 TO-92 VN0300L TO-92 ...
Page 2
... 10V 0. 0V 20V MHz V = 25V 1. 25Ω GEN 0.63A OUTPUT R gen D.U.T. INPUT 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com VN0300 11/12/01 ...