DMG2302U Diodes, Inc., DMG2302U Datasheet - Page 2

• Manufacturer Part Number: DMG2302U
• Description: N-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG2302U
Document number: DS31838 Rev. 2 - 2
10
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
8
6
4
2
0
0
V
GS
= 8.0V
0.5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
Characteristic
V
GS
V
1
GS
V
= 2.0V
V
GS
= 2.5V
GS
= 3.0V
= 4.5V
1.5
@T
A
2
= 25°C unless otherwise specified
V
V
GS
GS
= 1.2V
= 1.5V
2.5
Symbol
R
3
BV
V
www.diodes.com
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
DSS
R
Q
t
t
SD
oss
DSS
iss
rss
gs
gd
fs
r
f
g
g
|
2 of 6
Min
0.4
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
594.3
0.75
64.5
57.7
28.1
8
6
4
2
0
Typ
1.5
7.0
0.9
1.4
7.4
9.8
6.7
13
-
-
-
-
-
0
V
DS
Fig. 2 Typical Transfer Characteristics
±100
V
Max
120
1.0
1.0
1.0
= 5V
90
GS
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
, GATE SOURCE VOLTAGE (V)
T = 85°C
A
T = 125°C
Unit
mΩ
μA
nA
nC
nC
nC
A
pF
pF
pF
ns
Ω
ns
ns
ns
V
V
S
V
T = 150°C
A
1
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
DD
L
= 3.6A
= 2.78Ω, R
= 20V, V
= V
= 5V, I
= 10V, V
= 0V, V
= 0V, I
= ±8V, V
= 4.5V, I
= 2.5V, I
= 0V, I
= 4.5V, V
= 10V, V
T = -55°C
A
T = 25°C
GS
A
Test Condition
1.5
, I
D
D
S
GS
D
= 3.6A
DMG2302U
= 10μA
D
D
= 1A
GS
GS
DS
GS
DS
= 50μA
G
= 3.6A
= 3.1A
= 0V, f = 1MHz
= 1.0Ω
= 0V
= 0V
= 0V,
= 4.5V,
© Diodes Incorporated
= 10V,
June 2009
2