MC74HC05A ON Semiconductor, MC74HC05A Datasheet - Page 2

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MC74HC05A

Manufacturer Part Number
MC74HC05A
Description
Hex Inverter With Open Drain Outputs
Manufacturer
ON Semiconductor
Datasheet
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
†Derating − Plastic DIP: – 10 mW/_C from 65_ to 125_C
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V
V
(e.g., either GND or V
Symbol
Symbol
V
out
in
V
V
V
T
I
I
t
V
P
T
, V
T
r
I
out
CC
stg
should be constrained to the range GND v (V
, t
CC
out
CC
in
in
A
D
L
f
out
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
Power Dissipation in Still Air,
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
(Figure 1)
CC
). Unused outputs must be left open.
Plastic DIP, SOIC or TSSOP Package
CC
and GND Pins
in
TSSOP Package†
or V
SOIC Package†
Parameter
Parameter
out
Plastic DIP†
http://onsemi.com
) v V
V
V
V
CC
CC
CC
CC
= 2.0 V
= 4.5 V
= 6.0 V
. Unused inputs must always be tied to an appropriate logic voltage level
2
– 0.5 to V
– 0.5 to V
– 55
Min
2.0
– 0.5 to + 7.0
– 65 to + 150
0
0
0
0
Value
± 20
± 25
± 50
750
500
450
260
CC
CC
+ 125
1000
Max
+ 0.5
+ 0.5
V
500
400
6.0
CC
Unit
Unit
mW
mA
mA
mA
_C
_C
_C
ns
V
V
V
V
V
in
and

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