MMFT2955E ON Semiconductor, MMFT2955E Datasheet - Page 2

• Manufacturer Part Number: MMFT2955E
• Description: Power Mosfet 1 Amp, 60 Volts
• Manufacturer: ON Semiconductor

2. Switching characteristics are independent of operating junction temperature.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
SOURCE DRAIN DIODE CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage, (V
Zero Gate Voltage Drain Current,
Gate−Body Leakage Current,
Gate Threshold Voltage, (V
Static Drain−to−Source On−Resistance, (V
Drain−to−Source On−Voltage, (V
Forward Transconductance, (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Forward On−Voltage
Forward Turn−On Time
Reverse Recovery Time
10
(V
(V
(V
8
6
4
2
0
0
DS
DS
GS
= 60 Vdc, V
= 60 Vdc, V
= 15 V, V
15 V
Figure 1. On Region Characteristics
20 V
V
DS
2
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
GS
= 0)
= 0 Vdc)
= 0 Vdc, T
10 V
DS
4
= V
DS
Characteristic
GS
GS
= 15 V, I
J
= 125°C)
= 10 V, I
, I
D
TYPICAL ELECTRICAL CHARACTERISTICS
6
V
= 1 mA)
GS
GS
(T
D
T
(V
GS
J
A
= 0, I
D
= 0.6 A)
= 25°C
DS
= 10 V, R
dl
= 25°C unless otherwise noted)
= 10 V, I
= 1.2 A)
S
(V
(V
See Figures 15 and 16
/dt = 400 A/ms, V
= 20 V, V
D
I
DS
I
S
DD
S
= 250 mA)
= 1.2 A, V
8
V
= 1.2 A, V
= 48 V, I
= 25 V, I
GS
G
V
D
GS
= 50 W, R
= 0.6 A)
= 10 Vdc)
GS
http://onsemi.com
= 4 V
8 V
7 V
6 V
5 V
= 0, f = 1 MHz)
D
D
GS
GS
= 1.2 A,
10
= 1.6 A
R
= 0
= 0,
GS
= 30 V
2
= 25 W)
1.2
1.1
0.9
0.8
0.7
1
−50
Figure 2. Gate−Threshold Voltage Variation
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
DS(on)
DS(on)
C
V
GS(th)
C
Q
Q
g
d(on)
d(off)
DSS
GSS
Q
t
t
on
FS
oss
t
t
SD
rss
iss
rr
gs
gd
r
f
g
T
0
J
, JUNCTION TEMPERATURE (°C)
With Temperature
Min
2.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Limited by stray inductance
50
V
I
D
Typ
460
210
DS
7.5
2.8
7.5
1.0
84
18
29
44
32
18
90
= 1 mA
−
−
−
−
−
−
−
= V
GS
100
Max
0.48
100
1.0
4.5
0.3
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
pF
ns
ns
W
150