Switching Diodes
MA6X128
Silicon epitaxial planar type
For switching circuits
■ Features
■ Absolute Maximum Ratings T
Note) * 1: Value for single diode
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: March 2004
• Four isolated elements contained in one package, allowing high-
• Centrosymmetrical wiring, allowing to free from the taping direction
• The mirror image wiring of MA6X123 (MA123)
• Short reverse recovery time t
• Small terminal capacitance C
• High breakdown voltage: V
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
density mounting
* 2: t = 1 s
2. Absolute frequency of input and output is 100 MHz.
3. * : t
Parameter
rr
Parameter
measurement circuit
* 1, 2
Pulse Generator
(PG-10N)
R
s
= 50 Ω
* 1
* 1
*
Bias Application Unit (N-50BU)
A
R
(MA128)
rr
t
= 80 V
Symbol
Wave Form Analyzer
(SAS-8130)
R
V
I
I
T
V
FSM
T
I
FM
i
RM
stg
F
= 50 Ω
R
j
a
Symbol
= 25°C ± 3°C
V
V
C
I
t
a
R
rr
R
F
t
= 25°C
−55 to +150
Rating
100
225
500
150
80
80
I
I
V
V
I
I
F
R
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 10 mA, V
= 100 mA
= 100 µA
= 0.1 I
SKF00058BED
= 75 V
= 0 V, f = 1 MHz
R
V
Unit
, R
mA
mA
mA
°C
°C
R
V
V
Conditions
L
R
= 100 Ω
= 6 V
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: M2V
Internal Connection
EIAJ: SC-74
10˚
t
0.30
4
3
(0.95) (0.95)
+0.10
–0.05
I
F
2.90
2
1.9
5
I
V
R
Output Pulse
F
L
R
+0.20
–0.05
±0.1
= 10 mA
Min
= 100 Ω
= 6 V
80
6
1
t
I
rr
rr
3
4
= 0.1 I
Typ
5
2
t
R
6
1
Mini6-G2 Package
Max
100
1.2
1: Cathode 3, 4
2: Anode 1
3: Anode 2
4: Cathode 1, 2
5: Anode 3
6: Anode 4
2
3
0.16
+0.10
–0.06
Unit: mm
Unit
nA
pF
ns
V
V
1