MA6X718 Panasonic Corporation of North America, MA6X718 Datasheet
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MA6X718
Manufacturer Part Number
MA6X718
Description
Silicon Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA6X718.pdf
(3 pages)
Schottky Barrier Diodes (SBD)
MA6X718
Silicon epitaxial planar type
For switching
For wave detection
■ Features
■ Absolute Maximum Ratings T
Note) * : Value for single diode
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
• Three isolated elements are contained in one package, allowing
• Two MA3X704A (MA704A) is contained in one package (of a
• Forward voltage V
• Optimum for high frequency rectification because of its short
Detection efficiency
Reverse voltage
Peak forward current
Forward current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
high-density mounting
type in the same direction)
reverse recovery time t
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz.
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
*
*
F
*
, optimum for low voltage rectification
Pulse Generator
(PG-10N)
R
s
= 50 Ω
rr
Bias Application Unit (N-50BU)
(MA718)
Symbol
A
I
T
V
T
FM
I
stg
F
R
a
j
Symbol
= 25°C ± 3°C
Wave Form Analyzer
(SAS-8130)
R
i
V
V
C
= 50 Ω
I
t
η
a
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
125
30
30
I
I
V
V
I
I
V
R
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
L
R
R
IN
= 1 mA
= I
= 30 mA
= 1 mA , R
SKH00112BED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
V
R
(peak)
Unit
mA
mA
°C
°C
V
Conditions
t
r
L
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
, f = 30 MHz
= 0.35 ns
L
= 2 µs
= 100 Ω
t
= 10 pF
p
t
I
F
Marking Symbol: M2N
Internal Connection
I
I
R
EIAJ : SC-74
10˚
Output Pulse
F
R
L
= 10 mA
= 10 mA
0.30
0.50
= 100 Ω
4
3
t
I
rr
(0.95)
+0.10
–0.05
+0.10
–0.05
rr
= 1 mA
2.90
2
1.9
5
t
+0.20
–0.05
±0.1
(0.95)
Min
6
1
3
4
Typ
1.5
1.0
65
2
5
1
6
Mini6-G1 Package
Max
0.4
1.0
1
0.16
1 : Cathode 1
2 : Cathode 2
3 : Cathode 3
4 : Anode 3
5 : Anode 2
6 : Anode 1
+0.10
–0.06
Unit: mm
Unit
µA
pF
ns
%
V
1
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MA6X718 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA6X718 (MA718) Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Forward voltage V ...
Page 2
... MA6X718 75°C 25° 125°C −20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F −1 10 −2 10 − 120 160 200 ( °C ) Ambient temperature ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...