MA6Z718 Panasonic Corporation of North America, MA6Z718 Datasheet
MA6Z718
Manufacturer Part Number
MA6Z718
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA6Z718.pdf
(3 pages)
Schottky Barrier Diodes (SBD)
MA6Z718
Silicon epitaxial planar type
For switching
■ Features
■ Absolute Maximum Ratings T
Note) * : Value for single diode
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
• Three isolated elements are contained in one package, allowing
• Forward voltage V
• Optimum for high frequency rectification because of its short
Detection efficiency
Reverse voltage
Maximum peak reverse voltage
Peak forward current
Forward current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
high-density mounting
reverse recovery time t
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz.
and the leakage of current from the operating equipment.
Parameter
Parameter
*
*
F
*
, optimum for low voltage rectification
Pulse Generator
(PG-10N)
R
s
rr
= 50 Ω
Bias Application Unit (N-50BU)
(MA6S718)
Symbol
V
A
I
T
V
T
FM
I
RM
stg
F
R
a
j
Symbol
= 25°C ± 3°C
V
V
C
I
t
η
a
Wave Form Analyzer
(SAS-8130)
R
R
rr
F1
F2
i
t
= 25°C
= 50 Ω
−55 to +125
Rating
150
125
30
30
30
I
I
V
V
I
I
V
R
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
L
R
R
IN
= 1 mA
= I
= 30 mA
= 1 mA, R
SKH00114BED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
V
V
Conditions
L
R
= 100 Ω
4. * : t
, f = 30 MHz
L
t
r
= 10 pF
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
rr
t
p
measurement circuit
t
Marking Symbol: M2N
Internal Connection
1: Anode 1
2: Anode 2
3: Anode 3
EIAJ: SC-88
I
5˚
F
1
6
I
I
R
Output Pulse
F
R
(0.65)(0.65)
L
= 10 mA
= 10 mA
= 100 Ω
2.0
5
2
t
I
rr
±0.1
rr
Min
= 1 mA
4: Cathode 3
5: Cathode 2
6: Cathode 1
3
4
t
0.2
6
1
±0.05
Typ
1.5
1.0
65
5
2
3
4
SMini6-F1 Package
Max
0.4
1.0
1
Unit: mm
0.16
0.7
Unit
±0.1
µA
pF
ns
%
V
+0.10
–0.06
1
Related parts for MA6Z718
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Variable Output, Low Voltage Operation Shunt Regulator Ic
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Ccd Monochrome Video Camera Signal Processor Ic
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Ccd Video Camera Signal Processor Ics
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Switching Diodes
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
MA6Z718 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type For switching ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Forward voltage V , optimum for low voltage rectification F • Optimum for high frequency rectification because of its short ...
Page 2
... MA6Z718 75°C 25° −20°C = 125° –1 10 – 0.4 0.8 1.2 Forward voltage −1 10 −2 10 −40 40 120 200 ( °C ) Ambient temperature ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...