MA6J784 Panasonic Corporation of North America, MA6J784 Datasheet
MA6J784
Manufacturer Part Number
MA6J784
Description
Silicon Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA6J784.pdf
(3 pages)
Schottky Barrier Diodes (SBD)
MA6J784
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * 1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: October 2003
• I
• Optimum for high frequency rectification because of its short
• Low forward voltage V
Reverse voltage
Repetitive peak reverse voltage
Average forward current
Peak forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
reverse recovery time (t
F(AV)
* 2: Value of each diode in double diodes used.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Rated input/output frequency: 250 MHz
4. * : t
and the leakage of current from the operating equipment.
= 100 mA rectification is possible
Parameter
rr
Parameter
measuring instrument
* 1, 2
Pulse Generator
(PG-10N)
R
* 2
*
s
= 50 Ω
* 2
F
rr
and good rectification efficiency
)
Bias Application Unit N-50BU
Symbol
V
I
A
I
F(AV)
T
I
V
FSM
RRM
T
FM
stg
R
j
a
Symbol
= 25°C ± 3°C
V
I
C
t
a
R
rr
F
t
Wave Form Analyzer
(SAS-8130)
R
= 25°C
i
−55 to +125
= 50 Ω
Rating
100
300
125
30
30
1
I
V
V
I
I
F
F
rr
R
R
= 100 mA
= I
= 0.1 • I
SKH00133AED
= 30 V
= 0 V, f = 1 MHz
R
= 100 mA
R
Unit
mA
mA
°C
°C
V
V
A
Conditions
, R
L
= 100 Ω
V
R
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
Marking Symbol: M8A
Internal Connection
= 0.35 ns
= 2 µs
t
p
5˚
1
6
(0.65)(0.65)
2.0
t
2
5
±0.1
Min
3
4
I
F
6
1
I
I
R
0.2
Output Pulse
F
R
L
= 100 mA
= 100 mA
1: Anode 1
2: Anode 2
3: Anode 3
±0.05
= 100 Ω
Typ
5
2
2.0
20
I
t
rr
rr
4
3
= 0.1 • I
SMini6-F1 Package
Max
0.55
15
t
R
4: Cathode 3
5: Cathode 2
6: Cathode 1
EIAJ: SC-88
Unit: mm
0.16
0.7
Unit
µA
±0.1
pF
ns
V
+0.10
–0.06
1
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MA6J784 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA6J784 Silicon epitaxial planar type For super high speed switching For small current rectification I Features • 100 mA rectification is possible F(AV) • Optimum for high frequency rectification because of its short reverse recovery time ( • Low forward voltage V and good rectification efficiency ...
Page 2
M6J784 I 75°C 25° −20° 125° −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage T ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...