SBG1030 Sirectifier Semiconductors, SBG1030 Datasheet

SBG1030

Manufacturer Part Number

SBG1030

Description

Low Vf Schottky Barrier Rectifiers

Manufacturer

Sirectifier Semiconductors

Datasheet

1.SBG1030.pdf (2 pages)

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C(TAB)

NOTES: 1. 300us Pulse Width, 2% Duty Cycle.

FEATURES

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low V

* High surge capacity

* For use in low voltage, high frequency inverters, free

Symbol

whelling, and polarity protection applications

SBG1030

SBG1035

SBG1040

SBG1045

FSM

(AV)

A=Anode, C=Cathode, TAB=Cathode

STG

OJC

2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

3. Thermal Resistance Junction To Case.

Maximum Average Forward Rectified Current

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

Maximum Forward Voltage At 5A DC (Note 1)

Maximum DC Reverse Current

At Rated DC Blocking Voltage

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Storage Temperature Range

RRM

SBG1030 thru SBG1045

24.5

31.5

Low V

RMS

Characteristics

Schottky Barrier Rectifiers

Dimensions TO-263(D

=95 C

=25 C

=100 C

MECHANICAL DATA

* Case: D

* Polarity: As marked on the body

* Weight: 0.06 ounces, 1.7 grams

PAK)

1. Gate

2. Collector

3. Emitter

4. Collector

Botton Side

Maximum Ratings

PAK molded plastic

-55 to +125

-55 to +150

0.60

250

280

1.0

3.0

Dim.

14.61

Min.

4.06

2.03

0.51

1.14

0.46

1.14

8.64

8.00

9.65

6.22

2.29

1.02

1.27

0.46

2.54 BSC

Millimeter

10.29

15.88

Max.

4.83

2.79

0.99

1.40

0.74

1.40

9.65

8.89

8.13

2.79

1.40

1.78

0.20

0.74

.160

.080

.020

.045

.018

.045

.340

.315

.380

.245

.575

.090

.040

.050

.018

Min.

.100 BSC

Unit

Inches

C/W

Max.

.190

.110

.039

.055

.029

.055

.380

.350

.405

.320

.625

.110

.055

.070

.008

.029

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SBG1030 Summary of contents

Page 1

... SBG1030 thru SBG1045 Low V C(TAB A=Anode, C=Cathode, TAB=Cathode V V RRM RMS V V SBG1030 30 21 SBG1035 35 24.5 SBG1040 40 28 SBG1045 45 31.5 Symbol Characteristics I Maximum Average Forward Rectified Current (AV) Peak Forward Surge Current 8.3ms Single Half-Sine-Wave I FSM Superimposed On Rated Load (JEDEC METHOD) V Maximum Forward Voltage (Note 1) ...

Page 2

... SBG1030 thru SBG1045 Low V Schottky Barrier Rectifiers F ...

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