V80100P Vishay, V80100P Datasheet

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V80100P

Manufacturer Part Number
V80100P
Description
Dual High-voltage Trench Mos Barrier Schottky Rectifier
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
V80100PW-M3/4W
Quantity:
70 000
Document Number 88979
22-Aug-06
Instantaneous forward voltage per diode
MAJOR RATINGS AND CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse current per diode at t
Voltage rate of change (rated V
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Breakdown voltage
V
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
F
at I
T
V
I
I
j
F(AV)
FSM
RRM
max.
F
= 40 A
TO-247AD (TO-3P)
PIN 1
PIN 3
R
)
A
= 25 °C unless otherwise noted)
PIN 2
CASE
(1)
1
Ultra Low V
2
at I
at I
at I
p
3
0.667 V
150 °C
100 V
500 A
= 2 µs, 1 kHz
80 A
R
I
I
I
I
F
F
F
F
F
F
= 1.0 mA
TEST CONDITIONS
= 10 A
= 20 A
= 40 A
= 10 A
= 20 A
= 40 A
A
= 25 °C unless otherwise noted)
per device
per diode
New Product
T
T
T
F
J
J
J
= 0.425 V at I
= 25 °C
= 25 °C
= 125 °C
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, Oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SYMBOL
T
SYMBOL
J
V
I
dv/dt
I
I
F(AV)
, T
RRM
FSM
V
RRM
V
(BR)
STG
F
F
= 10 A
Vishay General Semiconductor
100 (minimum)
0.492
0.580
0.736
0.425
0.541
0.667
TYP.
- 40 to + 150
V80100P
10000
100
500
1.0
80
40
MAX.
0.78
0.72
-
-
-
-
-
V80100P
www.vishay.com
UNIT
V/µs
°C
V
A
A
A
UNIT
V
V
1

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V80100P Summary of contents

Page 1

... ° 125 ° V80100P Vishay General Semiconductor = V80100P 100 80 40 500 1.0 10000 - 150 TYP. MAX. 100 (minimum) - 0.492 - 0.580 - 0.736 0.78 F 0.425 - 0.541 - 0.667 0.72 www.vishay.com UNIT ...

Page 2

... Figure 2. Forward Power Loss Characteristics Per Diode TYP. MAX 800 20 45 V80100P 1.5 BASE QUANTITY DELIVERY MODE 30/Tube Tube Average Forward Current (A) Document Number 88979 UNIT µ ...

Page 3

... Document Number 88979 22-Aug-06 10000 1000 100 100 0.1 Figure 6. Typical Junction Capacitance Per Diode 10 1 0.1 0.8 1.0 0.01 Figure 7. Typical Transient Thermal Impedance Per Diode 80 90 100 V80100P Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 100 Reverse Voltage (V) Junction to Case 0 100 t - Pulse Duration (s) www ...

Page 4

... V80100P Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.840 (21.3) 0.820 (20.8) 0.795 (20.2) 0.775 (19.6) www.vishay.com 4 TO -247AD (T O-3P) 0.245 (6.2) 0.645 (16.4) 0.203 (5.16) 0.225 (5.7) 0.625 (15.9) 0.193 (4.90) 0.323 (8.2) 0.313 (7.9) 0.170 (4.3) 10 TYP. BOTH SIDES 0.142 (3.6) 0.138 (3. 0.086 (2.18) 0.076 (1.93) 0.118 (3.0) 0.127 (3.22) 0.108 (2.7) 0.160 (4.1) 0.117 (2.97) 0.140 (3.5) 0.225 (5.7) 0.030 (0.76) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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