TPC8018-H TOSHIBA Semiconductor CORPORATION, TPC8018-H Datasheet
TPC8018-H
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TPC8018-H Summary of contents
Page 1
... DGR ± GSS 1 1 210 0. 150 °C ch −55 to 150 T °C stg 1 TPC8018-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 2006-11-16 ...
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... Week of manufacture (01 for first week of year, continuing 53) Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 65.8 °C/W th (ch-a) R 125 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (Unit: mm) ( Ω TPC8018-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2006-11-16 ...
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... (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8018-H Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 15 ⎯ 1.1 2.3 V ⎯ ...
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... Gate-source voltage (ON) 100 Common source Ta = 25°C Pulse test 10 4 100 0.1 1 Drain current I 4 TPC8018-H – Common source Ta = 25°C Pulse test 3.5 3.4 3.3 3.2 3 2.8V 1.2 1.6 2 (V) DS – Common source Ta = 25°C Pulse test ...
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... Ambient temperature Ta ( Dynamic input/output characteristics 50 Common source 25°C Pulse test 160 Total gate charge Q 5 TPC8018-H – −0.6 −0.8 −1.0 (V) DS – 120 160 C) ° ...
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... I D max (Pulse) * 100 t=1ms * 10ms * 10 * Single - pulse Ta=25℃ 1 Curves must be derated linearly with increase in V DSS max temperature. 0.1 0 Drain-source voltage V ( – t – Single - pulse 0 100 Pulse width t (s) w 100 6 TPC8018-H (2) (1) 1000 2006-11-16 ...
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... TPC8018-H 2006-11-16 ...