SBS008M Sanyo Semiconductor Corporation, SBS008M Datasheet

SBS008M

Manufacturer Part Number

SBS008M

Description

Schottky Barrier Diode

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBS008M.pdf (3 pages)

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Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SBS008M-TL-E

Quantity:

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Part Number:

SBS008M-TL-E

Manufacturer:

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Ordering number : ENN7682

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : SA

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators,

converters, choppers).

Low forward voltage (I F =1A, V F max=0.32V)

(I F =2A, V F max=0.36V).

Ultrasmall package permitting applied sets to

be small and slim (mounting height 0.85mm).

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V F 1

V F 2

V R

I O

I R

t rr

50Hz sine wave, 1 cycle

I R =1.5mA

I F =1A

I F =2A

V R =6V

V R =10V, f=1MHz

I F =I R =100mA, See specified Test Circuit.

Mounted on a ceramic board (600mm

SBS008M

Conditions

Package Dimensions

unit : mm

1327

Conditions

(Bottom view)

0.65

2.0

0.8mm)

0.3

[SBS008M]

min

15V, 2A Rectifier

42004 TS IM TA-100846

(Top view)

Schottky Barrier Diode

0.15

Ratings

typ

0.28

0.32

Ratings

110

115

SBS008M

--55 to +125

1 : Cathode

2 : Cathode

3 : No Contact

4 : Anode

5 : Cathode

6 : Cathode

SANYO : MCPH6

max

0.32

0.36

1.2

No.7682-1/3

C / W

Unit

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SBS008M Summary of contents

Page 1

... I R =1.5mA = = = =10V, f=1MHz =100mA, See specified Test Circuit. Rth(j-a) Mounted on a ceramic board (600mm Schottky Barrier Diode SBS008M 15V, 2A Rectifier [SBS008M] 0 Cathode Cathode 2.0 ...

... Sine wave =180 0.5 0.4 0.3 0.2 Sine wave 0 0.5 1.0 1.5 Average Forward Current FSM -- t 12 Current waveform 50Hz sine wave 0. 0.1 2 Time SBS008M 0 0. 0.001 0.0001 0.00001 0.3 0.35 0.4 0.45 IT06646 1000 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. SBS008M PS No.7682-3/3 ...

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SBS008M Sanyo Semiconductor Corporation, SBS008M Datasheet

SBS008M

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SBS008M Summary of contents

Page 1

Page 2

Page 3

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