SBJ200-06J Sanyo Semiconductor Corporation, SBJ200-06J Datasheet

SBJ200-06J

Manufacturer Part Number

SBJ200-06J

Description

Schottky Barrier Diode Twin Type ? Cathode Common

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBJ200-06J.pdf (3 pages)

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Ordering number : ENA0193

SBJ200-06J

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Note) * : Value per element

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Small reverse current (I R typ=10 A) due to adoption of MRJ (Multi Refined PN Junction) structure.

Low forward voltage (V F typ=0.55V).

High temperature operation is possible (Tj=150 C).

High surge breakdown voltage.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-c)

V RRM

V RSM

I FSM

Tstg

V R

V F

I O

I R

Schottky Barrier Diode (Twin Type · Cathode Common)

60V, 20A Rectifier

50Hz resistive load, Sine wave Tc=90 C

50Hz sine wave, 1 cycle

I R =2mA, Tj=25 C*

I F =10A, Tj=25 C*

V R =30V, Tj=25 C*

V R =60V, Tj=25 C*

V R =10V, Tj=25 C*

Junction-Case : Smoothed DC

SBJ200-06J

Conditions

N2505SD MS IM TB-00001902

min

Ratings

typ

Ratings

0.55

450

--55 to +150

max

120

100

200

0.6

3.2

No. A0193-1/3

C / W

Unit

Related parts for SBJ200-06J

SBJ200-06J Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBJ200-06J Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 20A Rectifier Symbol Conditions ...

Page 2

... P F (AV *Value per 2-element Tj=150 C (1) 14 Rectangular wave 12 360 10 Sine wave 8 180 360 6 4 (1)Rectangular wav e =60 (2)Rectangular wav e =120 2 (3)Rectangular wav e =180 (4)Sine wav e =180 Average Output Current SBJ200-06J Electrical Connection 2.8 1.E+00 1.E--01 1.E--02 1.E--03 1.E--04 1.E--05 1.E--06 0 0.8 1.0 1.2 IT10224 18 (2) (4) ( ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. SBJ200-06J 1000 ...

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