V20120SG Vishay, V20120SG Datasheet - Page 3

• Manufacturer Part Number: V20120SG
• Description: V20120sg, Vf20120sg, Vb20120sg & Vi20120sg - High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

Document Number: 88994
Revision: 09-Aug-07
10000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.001
100
0.01
100
100
10
0.1
0.1
10
10
1
1
0.1
10
0
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Percent of Rated Peak Reverse Voltage (%)
20
0.2
T
A
Instantaneous Forward Voltage (V)
= 125 °C
30
0.4
T
A
T
= 150 °C
Reverse Voltage (V)
A
1
40
T
= 150 °C
0.6
A
T
= 25 °C
A
T
= 25 °C
50
A
T
= 125 °C
0.8
A
T
= 100 °C
A
60
= 100 °C
V20120SG, VF20120SG, VB20120SG & VI20120SG
1.0
10
70
T
f = 1.0 MHz
V
J
sig
= 25 °C
1.2
= 50 mVp-p
80
1.4
90
100
100
1.6
New Product
0.1
10
10
1
1
0.01
Figure 6. Typical Transient Thermal Impedance
0.01
Figure 7. Typical Transient Thermal Impedance
Vishay General Semiconductor
Junction to Case
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
V(B,I)20120SG
VF20120SG
10
10
www.vishay.com
100
100
3