V20150C Vishay, V20150C Datasheet - Page 3

• Manufacturer Part Number: V20150C
• Description: Dual High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

Document Number: 89046
Revision: 07-Mar-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10000
0.001
1000
0.01
100
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
10
1
1
0.1
10
0
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
T
20
A
0.2
= 125 °C
Instantaneous Forward Voltage (V)
30
0.4
T
T
A
T
A
A
= 150 °C
= 125 °C
Reverse Voltage (V)
40
T
= 150 °C
1
A
0.6
T
T
= 100 °C
A
A
= 25 °C
= 25 °C
50
[e-mail], [e-mail], [e-mail]
T
0.8
For technical questions within your region, please contact one of the following:
A
= 100 °C
60
1.0
70
10
T
f = 1.0 MHz
V
J
sig
1.2
= 25 °C
80
= 50 mVp-p
V20150C, VF20150C, VB20150C & VI20150C
1.4
90
100
100
1.6
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10
10
1
1
0.01
0.01
Vishay General Semiconductor
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
Junction to Case
V(B,I)20150C
10
10
VF20150C
www.vishay.com
100
100
3