FFAF30U60DN Fairchild Semiconductor, FFAF30U60DN Datasheet

Page 1

... Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =30A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FFAF30U60DN TO-3PF (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave ...

Page 2

... Figure 1. Typical Forward Voltage Drop vs. Forward Current 300 200 100 0.1 1 Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International 1000 100 0.1 0.01 1E-3 2.0 2.5 3.0 [V] F 100 Typical Capacitance 278 ...

Page 3

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 0.30 ©2000 Fairchild Semiconductor International TO-3PF 15.50 ø3.60 0.20 0.20 0.85 2.00 0.20 5.45TYP ] [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters Rev. F, September 2000 ...

Page 4

TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...