UHBS30-1 Advanced Semiconductor, Inc., UHBS30-1 Datasheet

UHBS30-1

Manufacturer Part Number

UHBS30-1

Description

Npn Silicon Rf Power Transistor

Manufacturer

Advanced Semiconductor, Inc.

Datasheet

1.UHBS30-1.pdf (1 pages)

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CHARACTERISTICS

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200

DESCRIPTION:

The

Class C, FM Base Applications up to

900 MHz.

FEATURES:

MAXIMUM RATINGS

Internal Input Matching Network

Omnigold™ Metalization System

SYMBOL

DISS

CBO

CEO

EBO

STG

ASI UHBS30-1

= 7.5 dB at 30 W/900 MHz

CBO

CES

CEO

CES

EBO

100 W @ T

NPN SILICON RF POWER TRANSISTOR

-65 °C to +200 °C

-65 °C to +150 °C

= 50 mA

= 10 mA

= 15 V

= 24 V

= 5.0 V

= 25 V

= 24 V

1.5°C/W

9.0 A

4.0 V

50 V

30 V

is Designed for

NONETEST CONDITIONS

= 25 °C

OUT

= 1.0 A

= 30 W

Specifications are subject to change without notice

= 10

f = 1.0 MHz

f = 900 GHz

PACKAGE STYLE .230 6L FLG

MINIMUM TYPICAL MAXIMUM

DIM

FAX (818) 765-3004

.430 D

ORDER CODE: ASI10670

4.0

7.5

.125

.115

.720 / 18.29

.970 / 24.64

.355 / 9.02

.115 / 2.92

.075 / 1.91

.225 / 5.72

.090 / 2.29

.355 / 9.02

.004 / 0.10

.120 / 3.05

.160 / 4.06

.230 / 5.84

MINIMUM

inches / mm

.040x45°

4X .025 R

UHBS30-1

.730 / 18.54

.980 / 24.89

MAXIMUM

.365 / 9.27

.125 / 3.18

.085 / 2.16

.235 / 5.97

.110 / 2.79

.365 / 9.27

.006 / 0.15

.130 / 3.30

.180 / 4.57

.260 / 6.60

inches / mm

---

2XØ.130

UNITS

REV. B

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