DGS3-01AS IXYS Corporation, DGS3-01AS Datasheet - Page 2

• Manufacturer Part Number: DGS3-01AS
• Description: Gallium Arsenide Schottky Rectifier
• Manufacturer: IXYS Corporation

© 2002 IXYS All rights reserved
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
IXYS reserve the right to change limits, conditions and dimensions.
Z
I
thJC
F
0,01
0,01
K/W
0,1
0,1
0,00001
10
10
30
A
1
1
0,0
Fig. 3 typ. thermal impedance junction to case
Fig. 1typ. forward characteristics
0,5
1,0
0,0001
tbd
1,5
Rectifier Diode
by majority + minority carriers
V
extraction of excess carriers
causes temperature dependant
reverse recovery (t
delayed saturation leads to V
F
Single Pulse
2,0
(I
F
T
125° C
V
)
25°C
VJ
0,001
F
=
2,5
V
3,0
rr
, I
0,01
RM
C
Advanced Technical Information
, Q
J
100
200
pF
10
rr
)
0,1
FR
Fig. 2 typ. junction capacity
0,1
by majority carriers only
V
reverse current charges
junction capacity C
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
F
1
versus blocking voltage
(I
F
T
), see Fig. 1
VJ
= 125° C
10
1
V
100
t
J
R
, see Fig. 2;
s
DGS 3-01AS
V
1000
10
Dim.
A1
A2
D1
E1
b1
b2
c1
e1
L1
L2
L3
A
b
c
D
E
e
H
L
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Min. Max.
Millimeter
2.28 BSC
4.57 BSC
TO-252 AA
0 0.13
DGS 3-01AS
1 Anode
2 NC
3 Anode
4 Cathode
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
Inches
0
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
Max.
2 - 2