HN29V25611A Renesas Electronics Corporation., HN29V25611A Datasheet

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HN29V25611A

Manufacturer Part Number
HN29V25611A
Description
256m And Type Flash Memory More Than 16,057-sector 271,299,072-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
HN29V25611AT-50
Manufacturer:
HITACHI/日立
Quantity:
20 000
To all our customers
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

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HN29V25611A Summary of contents

Page 1

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April ...

Page 2

Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...

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... V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V25611A are more than 16,057 (98% of all sector address) and less than 16,384 sectors. ...

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... HN29V25611A Series Erase mode Single sector erase ((2048 + 64) byte unit) Fast serial read access time: First access time (max) Serial access time (max) Low power dissipation (typ) (Read) CC1 (max) (Read) CC2 (max) (Standby) SB2 (max) (Erase/Program) ...

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... I/O1 11 I/ I/O4 16 I/O5 17 I/O6 18 I/O7 19 CDE NC Note: 1. This pin can be used as the V HN29V25611A Series 48-pin TSOP (Top view) pin ...

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... HN29V25611A Series Pin Description Pin name I/ CDE RDY/Busy RES SC NC Note: 1. All V and V pins should be connected to a common power supply and a ground, respectively Function Input/output Chip enable Output enable Write enable Command data enable Power supply ...

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... CE OE Read/Program/Erase control Control WE signal SC buffer RES CDE 2048 + 64 X-decoder 16384 (2048 + 64) memory matrix Data register (2048 + 64) Data Input • • Y-gating input data • • buffer control Y-decoder Y-address • counter • HN29V25611A Series 8 Data output buffer • • • 5 ...

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... HN29V25611A Series Memory Map and Address Sector address 3FFFH 3FFEH 3FFDH 0002H 0001H 0000H 000H Address Cycles Sector address SA (1): First cycle SA (2): Second cycle Column address CA (1): First cycle CA (2): Second cycle Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized by reading the sector valid data written in a part of the column address 800 to 83F (The specific address is TBD ...

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... IH IH IHR IHR IHR IL and maintain the HN29V25611A Series (V IHR I/O0 to I/O7 High-Z OH High-Z OH High-Z OH Status register outputs OH Din OH (conventional read operation level while the RDY/Busy pin referred to DC characteristics ...

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... HN29V25611A Series 1, 2 Command Definition* Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* Program (3) (Control bytes)* Program (4) (WithoutCA* (With CA* Reset Clear status register ...

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... SA (2 Write SA (2 Write SA (2 2h* Write SA (2 Write SA (2)* HN29V25611A Series Fourth bus cycle Operation Data in mode 5 Write CA (1)* 11 Write B0H* *11, 12 Write 40H Write CA (1) *11, 12 Write 40H *11, 12 Write 40H *11, 12 Write 40H ...

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... HN29V25611A Series Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* Program (3) (Control bytes)* Program (4) (WithoutCA* (With CA* Reset Clear status register Data recovery write Notes: 1 ...

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... When the column is programmed, the data of the column must be [FF]. After the programming starts, the program completion can be checked through the RDY/Busy signal and status data polling. Programmed bits in the sector turn from "1" to "0" when they are programmed. HN29V25611A Series . IH ...

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... HN29V25611A Series Program (4): Program data PD0 to PD2111 is programmed into the sector of address SA automatically by internal control circuits. When CA is input, program data PD ( programmed from CA into the sector of address SA automatically by internal control circuits. By using program (4), data can be rewritten for each sector before the following erase. So the column data before programming operation are either " ...

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... Program (4) mode, rewritten sector of address SA’ needs no sector erase before rewrite. After the data recovery write mode starts, the program completion can be checked through the RDY/Busy signal and the status data polling. HN29V25611A Series . The read data are invalid when addresses IH ...

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... HN29V25611A Series Command/Address/Data Input Sequence Serial Read (1) (With CA before SC) Command 00H SA (1) SA (2) /Address CDE WE Low SC Serial Read (1) (With CA after SC) Command 00H SA (1) SA (2) /Address CDE WE Low SC Data output Serial Read (1) (Without CA), (2) Command/Address 00H/F0H CDE WE Low SC Single Sector Erase Command/Address ...

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... Low SC Data input Program (1), (4) (Without CA) Command/Address 10H/11H CDE WE SC Low Program (2) Command/Address 1FH CDE WE SC Low HN29V25611A Series CA (2) CA (1)' CA (2)' Data input CA (1) CA (2) CA (1)' Data input SA (1) SA (2) Data input SA (1) SA (2) Data input 40H Data input Program start ...

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... HN29V25611A Series Program (3) Command/Address 0FH CDE WE SC Low ID Read Mode Command/Address CDE WE SC Low Data Recovery Read Mode Command/Address Data Recovery Write Mode Command/Address CDE (1) SA (2) Data input 90H Manufacture Device code code output output 01H CDE WE SC Low ...

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... SC, CDE Program finish 50H 1 01H* Data recovery read setup CE Error 1 12H* Output Data recovery standby disable write setup FFH OE HN29V25611A Series OE CA(1)' SC CA(2)' Read (1) / (2) BUSY OE Status register Erase read start OE 40H Status register Program read start OE 40H Status register ...

Page 20

... HN29V25611A Series Absolute Maximum Ratings Parameter V voltage CC V voltage SS All input and output voltages Operating temperature range Storage temperature range Storage temperature under bias Notes: 1. Relative Vin, Vout = –2.0 V for pulse width 3. Device storage temperature range before programming. Capacitance (Ta = 25˚ MHz) ...

Page 21

... CC — — 0.4 V 2.4 — — the read operation the erase/data programming operation over the specified maximum value, the IH – 0 HN29V25611A Series Test conditions Vin = Vout = 0 RES = V 0 RES = V 0 ...

Page 22

... HN29V25611A Series Power on and off, Serial Read Mode Parameter Symbol Write cycle time t CWC Serial clock cycle time t SCC CE setup time t CES CE hold time t CEH Write pulse time t WP Write pulse high time t WPH Address setup time t AS Address hold time ...

Page 23

... Busy time on read mode t RBSY Notes time after which the I/O pins become open (min) is specified as a reference point only for SC WSD limit, then access time is controlled exclusively by t HN29V25611A Series Min Typ Max Unit Test conditions 50 — — — ...

Page 24

... HN29V25611A Series Program, Erase and Erase Verify Parameter Symbol Write cycle time t CWC Serial clock cycle time t SCC CE setup time t CES CE hold time t CEH Write pulse time t WP Write pulse high time t WPH Address setup time t AS Address hold time t AH ...

Page 25

... SC to output delay t SAC SC to output hold t SH RDY/Busy setup for Busy time on read mode t RBSY Note time after which the I/O pins become open. DF HN29V25611A Series Min Typ Max Unit Test conditions — — 120 ns — — — — ...

Page 26

... HN29V25611A Series Timing Waveforms Power on and off Sequence VRS CES WE t CWRS RES BSY RDY /Busy Notes: 1. RES must be kept at the V ILR to guarantee data stored in the chip. 2. RES must be kept at the V IHR status data polling and RDY/Busy outputs the V 3 ...

Page 27

... SPL SAC SAC SAC t SAC OEL OEL CA(1)' CA(2)' D(n)out D(n+1)out D(n+i)out High-Z RS 2111-n, 0 2111-m, 0 2048 + 64) HN29V25611A Series COH t t CPH CEH CDH t SOH t CDS SAC DF FFH 2 * level COH t ...

Page 28

... HN29V25611A Series Serial Read (1) with CA after SC Timing Waveform CE t CES CWC CWC WPH WPH OER OEWS CDE t CDH OES t t SCC WSD t t CDS CDS SPL SCS ...

Page 29

... By using program (1), data can be programmed additionally for each sector before erase. t CEH t OEPS t CDSS SCC CDH CDH t SCHW SPL SDH SDS PD0 PD1 PD2111 40H HN29V25611A Series RDY CDS ASP I/ I/ High ...

Page 30

... HN29V25611A Series Program (1) with CA before SC and Status Data Polling Timing Waveform CE t CES CWC CWC CWC CWC OEWS WPH WPH WPH WPH CDS CDS CDE t SCS t CDH ...

Page 31

... CEH t OEPS t t CDSS SCC CDH t 1 CDH * t t SCHW SPL SDH SDS PD0 PD1 PD2111 40H HN29V25611A Series RDY OE t ASP CDS I/ I/ High ...

Page 32

... HN29V25611A Series Program (3) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t WPH CDS CDS CDE t CDH SCS I/O0 to I/O7 0FH SA (1) SA (2) RES t High-Z RP RDY /Busy Notes: 1. The programming operation is not guranteed when the number of the SC pulse exceeds 64. ...

Page 33

... SCC CDH CDH t SCHW SPL t WSD SDH SDS PD0 PD1 PD2111 40H High-Z t RBSY . OL HN29V25611A Series RDY OE t ASP CDS I/ I/ High ...

Page 34

... HN29V25611A Series Program (4) with CA before SC and Status Data Polling Timing Waveform CE t CES CWC CWC CWC CWC OEWS WPH WPH WPH WPH CDS CDS CDE t SCS t t CDH WSD ...

Page 35

... RES t RP RDY /Busy Note: 1. The status returns to the standby at the rising edge of CE COH t CDOH CDAC CDAC SCS CDF CDF Device Manufacturer code code High-Z HN29V25611A Series COH Status register 33 ...

Page 36

... HN29V25611A Series Data Recovery Read Timing Waveform CE t CES OEWS OER CDH t CDS WP CDE t OES SCS OEL I/O0 to I/O7 01H RES RDY /Busy Notes: 1. The status returns to the standby at the rising edge of CE. 2. Output data is not valid after the number of the SC pulse exceed 2112 in the recovery data read mode. ...

Page 37

... The status returns to the standby status after RDY/Busy returns to High- CEH CWC OEPS t WPH t ASP CDS t CDH t t CDH SCHW IO7 = V SA(2) 40H HN29V25611A Series t RDY t CDS IO7 = High ...

Page 38

... HN29V25611A Series Clear Status Register Timing Waveform CE t CES OE t OEWS CDH WP CDE t CDS SC t SCS I/O0 to I/O7 50H RES High High-Z RDY /Busy Note 1. The status returns to the standby at the rising edge of CE CEH t WPH t CDS t CDH t WP ...

Page 39

... Function Description Status Register: The HN29V25611A outputs the operation status data as follows: I/O7 pin outputs a V indicate that the memory is in either erase or program operation. The level of I/O7 pin turns the operation finishes. I/O5 and I/O4 pins output V complete in a finite time, respectively. If these pins output V out ...

Page 40

... HN29V25611A Series Requirement for System Specifications 5 Program/Erase Endurance: 10 cycles Item Usable sectors (initially) Spare sectors ECC (Error Correction Code) 38 Min Typ 16,057 — 290 — 3 — Max Unit 16,834 sector — sector — bit/sector ...

Page 41

... Unusable Sector Initially, the HN29V25611A includes unusable sectors. The unusable sectors must be distinguished from the usable sectors by the system as follows. 1. Check the partial invalid sectors in the devices on the system. The usable sectors were programmed the following data. Refer to the flowchart “Indication of unusable sectors”. ...

Page 42

... HN29V25611A Series Requirements for High System Reliability The device may fail during a program, erase or read operation due to write or erase cycles. The following architecture will enable high system reliability if a failure occurs. 1. For an error in read operation: An ECC (Error Correction Code similar function which can correct 3-bits per each sectors is required for data reliability ...

Page 43

... Check status Yes Clear status register Load data from external buffer Check status: Status register read END Spare Sector Replacement Flow after Program Error HN29V25611A Series Data recovery read Data recovery write Set another Program start usable sector Check RDY/Busy Program end ...

Page 44

... HN29V25611A Series For Errors in program or erase operations The device may fail during a program or erase operation. Failure mode can be confirmed by read out the status register after complete the erase and program operations. There are two failure modes specified by each codes: 1: Status register error flag: I/ Replace sector under the “ ...

Page 45

... Memory Structure 2,112 bytes (16,896 bits) Bit: Minimum unit of data. Byte: Input/output data unit in programming and reading. (1 byte = 8 bits) Sector: Page unit in erase, programming and reading. (1 sector = 2,112 bytes = 16,896 bits) Device: 1 device = 16,384 sectors. HN29V25611A Series bit sector byte (8 bits) 43 ...

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... HN29V25611A Series Package Dimensions HN29V25611AT Series (TFP-48DA) 12.00 12.40 Max 0.50 *0.22 0.08 0.08 M 0.20 0.06 0.45 Max 0.08 *Dimension including the plating thickness Base material dimension 44 25 20.00 0.20 Hitachi Code JEDEC EIAJ Mass (reference value) Unit: mm 0.80 0 – 8 0.50 0.10 TFP-48DA Conforms Conforms 0.52 g ...

Page 47

... Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201,D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89 HN29V25611A Series Hitachi Asia Ltd. Hitachi Asia (Hong Kong) Ltd. Hitachi Tower Group III (Electronic Components) 16 Collyer Quay #20-00 7/F., North Tower Singapore 049318 World Finance Centre, Tel : < ...

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