FSS264 Sanyo Semiconductor Corporation, FSS264 Datasheet - Page 2

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FSS264

Manufacturer Part Number
FSS264
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Continued from preceding page.
Package Dimensions
unit : mm
7005-002
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.595
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
0
0
1
8
0
0
1.27
Parameter
0.1
5.0
2
0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
5
4
4
0.43
0.3
R DS (on) -- V GS
6
I D -- V DS
0.4
0.5
8
0.2
0.6
Symbol
10
V SD
Qgs
Qgd
Qg
0.7
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
12
V GS =2.5V
0.8
V DS =50V, V GS =10V, I D =4A
V DS =50V, V GS =10V, I D =4A
V DS =50V, V GS =10V, I D =4A
I S =4A, V GS =0V
Ta=25 C
I D =2A
14
0.9
IT10020
IT10022
FSS264
1.0
16
Conditions
Switching Time Test Circuit
200
150
100
50
8
7
6
5
4
3
2
1
0
0
--60
0
V DS =10V
10V
P.G
--40
0V
PW=10 s
D.C. 1%
0.5
V IN
--20
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
1.0
0
V IN
min
R DS (on) -- Ta
50
G
20
I D -- V GS
1.5
40
Ratings
typ
V DD =50V
0.81
D
60
5.5
34
2.0
6
S
I D =2A
R L =25
80
max
2.5
FSS264
100
1.2
V OUT
No. A0267-2/4
120
3.0
Unit
140
nC
nC
nC
IT10021
IT10023
V
160
3.5

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