SUF-5000 Sirenza Microdevices, SUF-5000 Datasheet

SUF-5000

Manufacturer Part Number

SUF-5000

Description

Dc-6.5 Ghz, Gaas Hbt Mmic Amplifier

Manufacturer

Sirenza Microdevices

Datasheet

1.SUF-5000.pdf (4 pages)

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Product Description

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

Test Conditions: V

Broomfield, CO 80021

Sirenza Microdevices’ SUF-5000 is a monolithically matched broadband

high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based

amplifier uses a patented self-bias Darlington topology featuring a gain

and temperature compensating active bias network that operates from

a single 5V supply. It offers efficient, cascadable performance in a

compact 0.88 x 0.86 mm

applications.

303 S. Technology Ct.

Symbol

ΔG/ΔT

Rth, j-l

P1dB

OIP3

ORL

IRL

Isol

GAIN

Test Conditions:

ORL

Small Signal Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Noise Figure

Input Return Loss

Output Return Loss

Reverse Isolation

Device Operating Voltage

Device Operating Current

Gain Variation vs.Temperature

Thermal Resistance (junction to backside)

Gain & Return Loss vs. Frequency

= 5.0V, I

= Z

IRL

die. It is well-suited for RF, LO, and IF driver

(GSG Probe Data)

= 50 Ohms, 25C, GSG Probe Data With Bias Tees

Frequency (Ghz)

= 90mA OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm

Parameters

= 25ºC

= 5 V

Phone: (800) SMI-MMIC

= 80 mA Typ.

= Z

= 50 Ohms

-5

-10

-15

-20

-25

-30

dB/°C

°C/W

Units

dBm

Product Features

•

• 5V Operation, No Dropping Resistor

•

Applications

•

SUF-5000

0.1-3.7 GHz, Cascadable pHEMT

MMIC Amplifier

High Gain = 19.0 dB @ 2 GHz

P1dB = 22 dBm @ 2 GHz

Low-noise, Efficient Gain Block

Low Gain Variation vs. Temperature

Patented Thermal Design

Patented Self-Bias Darlington Circuit

Broadband Communications

High IP3 RF Driver Applications

Broadband Performance

LO and IF Mixer Applications

Test Instrumentation

Military & Space

OIP

Measured with Bias Tees

Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Frequency

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

Min.

Preliminary

-19.0

-15.0

-13.0

-12.0

-24.0

-23.0

-0.01

http://www.sirenza.com

19.0

17.0

22.0

34.5

Typ.

133

3.2

3.6

5.0

EDS-105419 Rev B

Max.

Related parts for SUF-5000

SUF-5000 Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SUF-5000 is a monolithically matched broadband high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0 ...

Page 2

... Frequency (GHz) S11 vs. Frequency 0 -5 -10 -15 -20 -25 - Frequency (GHz) OIP3 vs. Frequency 25C 30 -20C 85C Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier 25.0 23.0 21.0 19.0 17.0 15 -10 -15 -20 0C 25C -25 85C - ...

Page 3

... Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C Test Conditions: Current Variation vs. Temperature Current vs. Voltage 100 4.75 4.80 4.85 4.90 4.95 5.00 5. 303 S. Technology Ct. Broomfield, CO 80021 SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier Gain P1dB OIP3 (dB) (dBm) (dBm) 20.5 20.0 20.0 22.0 19.0 22.0 17.0 22.0 14.0 21.0 9 ...

Page 4

... Bias is applied through this pad. Die Die bottom must be connected to RF/DC ground GND Bottom using silver-filled conductive epoxy. Device Assembly DC Block 303 S. Technology Ct. Broomfield, CO 80021 SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier 1 2 Description Interconnect Wire or Ribbon 50 Ω Line 3-5 mil gap Phone: (800) SMI-MMIC 4 ...

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