Schottky Barrier Diodes (SBD)
MA3Z793
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * 1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
O
Publication date: August 2001
• Two MA3Z792 (MA792) is contained in one package (series con-
• I
• Optimum for high frequency rectification because of its short
• Low forward voltage V
• S-Mini type 3-pin package
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward
current
Average forward
current
Non-repetitive peak forward-
surge-current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
nection)
reverse recovery time (t
F(AV)
* 2: Value per chip
2. Rated input/output frequency: 250 MHz
and the leakage of current from the operating equipment.
= 100 mA rectification is possible
Parameter
Parameter
* 1
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
Series
Single
Series
Single
*
A
F
rr
* 2
* 2
)
and good rectification efficiency
(MA793)
Wave Form Analyzer
(SAS-8130)
R
i
Symbol
= 50 Ω
V
I
I
F(AV)
T
I
V
FSM
RRM
T
FM
stg
R
a
j
Symbol
= 25°C
V
I
C
t
a
R
rr
F
t
= 25°C
−55 to +125
Rating
300
200
100
125
3. * : t
30
30
70
1
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 100 mA
= I
= 10 mA, R
SKH00098AED
= 30 V
= 0 V, f = 1 MHz
rr
V
R
R
measuring instrument
= 100 mA
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
Unit
= 0.35 ns
mA
mA
= 2 µs
°C
°C
V
V
A
Conditions
t
p
L
= 100 Ω
t
I
F
I
I
R
Marking Symbol: M4A
Internal Connection
F
R
Output Pulse
L
= 100 mA
= 100 mA
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
= 100 Ω
5°
Anode 2
I
t
rr
rr
(0.65)
= 10 mA
1
1.3
2.0
±0.1
±0.2
(0.65)
t
3
2
0.3
Min
+0.1
–0
1
Typ
20
2
3
2
SMini3-F1 Package
Max
0.55
0.9
15
±0.1
Unit: mm
0.15
Unit
µA
pF
ns
V
+0.1
–0.05
1