FGAF40N60UFD Fairchild Semiconductor, FGAF40N60UFD Datasheet

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FGAF40N60UFD

Manufacturer Part Number
FGAF40N60UFD
Description
Fgaf40n60ufd Ultrafast Igbt
Manufacturer
Fairchild Semiconductor
Datasheet

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©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
J
L
CES
GES
D
Symbol
JC
JC
JA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
TO-3PF
Description
Parameter
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
= 25 C
= 100 C
= 100 C
= 25 C
= 100 C
G
G
FGAF40N60UFD
Typ.
--
--
--
-55 to +150
-55 to +150
600
160
160
100
300
40
20
15
40
20
CE(sat)
C
C
E
E
rr
= 50ns (typ.)
Max.
1.2
2.6
= 2.3 V @ I
40
IGBT
FGAF40N60UFD Rev. A
C
Units
= 20A
Units
C/W
C/W
C/W
W
W
V
V
A
A
A
A
A
C
C
C

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FGAF40N60UFD Summary of contents

Page 1

... 100 100 100 C C Parameter IGBT = 2 20A CE(sat 50ns (typ FGAF40N60UFD Units 600 160 160 A 100 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 1.2 C/W -- 2.6 C C/W FGAF40N60UFD Rev. A ...

Page 2

... V -- 2 1075 -- pF -- 170 -- 130 100 ns -- 470 -- uJ -- 130 -- uJ -- 600 1000 110 200 250 ns -- 500 -- uJ -- 310 -- uJ -- 810 1200 150 Typ. Max. Units -- 1 4 180 nC -- 220 -- FGAF40N60UFD Rev. A ...

Page 3

... GE Fig 6. Saturation Voltage vs =15V 1 Collector-Emitter Voltage, V (V) CE Characteristics Vcc = 300V Load Current : peak of square wave 1 10 100 1000 Frequency [kHz] Common Emitter = 125 ℃ 40A 20A Ic=10A Gate - Emitter Voltage FGAF40N60UFD Rev ...

Page 4

... Ton Tr 10 100 ( Ω ) Gate Resistance =± 15V GE Eon Eoff 10 100 ( Ω ) Gate Resistance Common Emitter = ± 15V V = 300V ℃ 125 ℃ Collector Current, I [A] C Collector Current FGAF40N60UFD Rev. A 200 200 40 ...

Page 5

... Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT =15 Ω L 300V 200V Vcc=100V Gate Charge, Qg (nC) Safe Operating Area o V =20V, T =100 100 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + FGAF40N60UFD Rev. A 120 1000 ...

Page 6

... Fig 19. Reverse Recovery Current 120 100 400 600 800 1000 Fig 21. Reverse Recovery Time V = 200V 15A 25℃ 100℃ C 200 400 600 800 1000 di/dt [A/us 200V 15A 25℃ 100℃ C 200 400 600 800 1000 di/dt [A/us] FGAF40N60UFD Rev. A ...

Page 7

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2004 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters FGAF40N60UFD Rev. A ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ ...

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