NGD15N41CL ON Semiconductor, NGD15N41CL Datasheet

NGD15N41CL

Manufacturer Part Number

NGD15N41CL

Description

Ignition Igbt 15 Amps, 410 Volts

Manufacturer

ON Semiconductor

Datasheet

1.NGD15N41CL.pdf (11 pages)

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Bonase Electronics (HK) Co., Limited

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NGD15N41CLT4

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NGD15N41CLT4G

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5 000

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Part Number:

NGD15N41CLT4G

Manufacturer:

Quantity:

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NGD15N41CL,

NGB15N41CL,

NGP15N41CL

Ignition IGBT

15 Amps, 410 Volts

N−Channel DPAK, D

monolithic circuitry integrating ESD and Over−Voltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

May, 2006 − Rev. 7

Collector−Emitter Voltage

Collector−Gate Voltage

Gate−Emitter Voltage

Collector Current−Continuous

ESD (Human Body Model)

ESD (Machine Model) R = 0 Ω, C = 200 pF

Total Power Dissipation @ T

Operating and Storage Temperature Range

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

Stress Applied to Load

Per Area

Microprocessor Devices

Ideal for Coil−on−Plug Applications

DPAK Package Offers Smaller Footprint and Increased Board Space

Gate−Emitter ESD Protection

Temperature Compensated Gate−Collector Voltage Clamp Limits

Integrated ESD Diode Protection

New Design Increases Unclamped Inductive Switching (UIS) Energy

Low Threshold Voltage to Interface Power Loads to Logic or

Low Saturation Voltage

High Pulsed Current Capability

Optional Gate Resistor (R

Pb−Free Packages are Available

@ T

R = 1500 Ω, C = 100 pF

Derate above 25°C

= 25°C − Pulsed

Rating

= 25°C unless otherwise noted)

Preferred Device

= 25°C

) and Gate−Emitter Resistor (R

PAK and TO−220

Symbol

ESD

, T

CES

CER

stg

−55 to

Value

+175

0.71

440

800

107

8.0

Watts

W/°C

Unit

)

°C

See detailed ordering and shipping information in the package

dimensions section on page 8 of this data sheet.

See general marking information in the device marking

section on page 8 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

DEVICE MARKING INFORMATION

1 2

ORDERING INFORMATION

= 10 A, V

CE(on)

http://onsemi.com

410 VOLTS

15 AMPS

3 2.1 V @

Publication Order Number:

CASE 369C

CASE 221A

CASE 418B

TO−220AB

STYLE 2

STYLE 9

STYLE 4

DPAK

. 4.5 V

PAK

NGD15N41CL/D

Related parts for NGD15N41CL

NGD15N41CL Summary of contents

Page 1

... AMPS 410 VOLTS CE(on 4 DPAK CASE 369C STYLE PAK CASE 418B 2 STYLE TO−220AB CASE 221A STYLE ORDERING INFORMATION Publication Order Number: NGD15N41CL/D ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Single Pulse Collector−to−Emitter Avalanche Energy 5 16 1.8 mH, Starting 5.0 V, ...

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (continued) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−On Delay Time Rise Time 3. ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted 25° COLLECTOR TO EMITTER VOLTAGE (VOLTS) CE Figure 1. Output Characteristics ...

Page 5

GATE TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage 2 ...

Page 6

Duty Cycle = 0.5 0.2 1 0.1 0.05 0.02 0.01 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 Figure 13. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on 4″ Figure 14. Test Fixture for Transient Thermal Curve (48 square inches of ...

Page 7

100 ms 0.1 0. COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T 100 ms 0.05 1 ...

Page 8

... ORDERING INFORMATION Device NGD15N41CLT4 NGD15N41CLT4G NGB15N41CLT4 NGB15N41CLT4G NGP15N41CL NGP15N41CLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DPAK CASE 369C STYLE 7 1 Gate YWW Collector Collector ...

Page 9

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 10

... M VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 11

... U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 9: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGD15N41CL/D ...

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